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Takao Abe Patents
Inventor:
Abe; Takao
Address:
Yukuhashi, JP
No. of patents:
114
Patents:


1 2 3


Patent Number Title Of Patent Date Issued
7393706 Method of manufacturing optical semiconductor device, package molding jig, method of manufacturi July 1, 2008
A method of manufacturing an optical semiconductor device includes preparing an optical semiconductor provided on a distal end of a first lead portion of a lead frame and connected electrically with a distal end of a second lead portion of the lead frame, forming thermoplastic resin
7352426 Electrode-wiring substrate and display device April 1, 2008
An electrode-wiring substrate includes first routing wires (108) made of gate material for forming gate electrode wires (105) and second routing wires (110) made of source material for forming source electrode wires (106). The first routing wires (108) and the second routing wires (110)
7294779 Solar cell and method for producing the same November 13, 2007
A solar cell 1 has a number of grooves 2 formed in parallel with each other on a first main surface 24a of a silicon single crystal substrate. An electrode 6 is formed on the inner side face of each groove 2 on one side. Each groove 2 is formed in the direction in disagreement with the
7112582 Bicyclic 6-alkylidene-penems as .beta.-lactamase inhibitors September 26, 2006
The present invention provides a compound of formula I, pharmaceutical compositions and the use thereof for the treatment of bacterial infection or disease in a patient in need thereof. ##STR00001## wherein one of A and B denotes hydrogen and the other an optionally substituted fused
7060386 Nonaqueous electrolyte solution secondary battery June 13, 2006
A nonaqueous electrolyte secondary battery which can reliably perform a current cut-off operation in a current cut-off state and can release a gas in a cleavage state. In the nonaqueous electrolyte secondary battery, an electrode element is held in a circularly cylindrical outer packagin
7018997 Tricyclic 6-alkylidene-penems as .beta.-lactamase inhibitors March 28, 2006
The present invention provides a compound of formula I, pharmaceutical compositions and the use thereof for the treatment of bacterial infection or disease in a patient in need thereof. ##STR00001## wherein one of A and B denotes hydrogen and the other an optionally substituted fused
6982118 Polyester type conjugate fiber package January 3, 2006
A package of polyester type conjugate fiber of either a side-by-side type or an eccentric sheath/core type in which two kinds of polyester components are adhered to each other to form a single filament, wherein at least one of the components consisting of the single filament is polyt
6963024 Solar cell module and its installing module November 8, 2005
A solar cell module 60 has a plurality of solar cells 14 having a plurality of parallel grooves 8 on the individual light-receiving surfaces thereof, each of the grooves having an electrode 5 for extracting output on the inner side face (electrode-forming inner side face) on one side in
6949210 Composite fiber having favorable post-treatment processibility and method for producing the same September 27, 2005
The present invention provides a polytrimethylene terephthalate composite fiber characterized in that the composite fiber is a plurality of single filament which comprises two kinds of polyester components laminated to each other in a side-by-side manner or an eccentric sheath-core manne
6899758 Method and apparatus for growing single crystal May 31, 2005
The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat cond
6830740 Method for producing solar cell and solar cell December 14, 2004
The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single
6824869 Polyester type conjugate fiber package November 30, 2004
A package of polyester type conjugate fiber of either a side-by-side type or an eccentric sheath/core type in which two kinds of polyester components are adhered to each other to form a single filament, wherein at least one of the components consisting of the single filament is polyt
6815645 Heat reflecting material and heating device using the material November 9, 2004
A heating apparatus 20 comprises a container 2 having a work housing space 1 formed therein, and a heat source 3 for heating a work W in the work housing space 1. The apparatus further comprises a heat ray reflecting member 10 having a heat reflecting surface 10a thereof composed of a he
6815605 Silicon single crystal and wafer doped with gallium and method for producing them November 9, 2004
There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5.OMEGA..cm to 0.1.OMEGA..cm and a method for producing a silicon single crystal to
6805991 Nonaqueous electrolyte solution secondary battery October 19, 2004
There is provided a nonaqueous electrolyte secondary battery which can reliably perform a current cut-off operation in a current cut-off state and can release a gas in a cleavage state. In the nonaqueous electrolyte secondary battery, an electrode element is held in a circularly cyli
6770507 Semiconductor wafer and method for producing the same August 3, 2004
There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion imp
6709689 Drawn yarn package and production method therefor March 23, 2004
The present invention provides a package of poly(trimethylene terephthalate) drawn yarn obtained by a direct spin-draw process of poly(trimethylene terephthalate), having an industrially practical winding amount and excellent in unwindability during high speed unwinding after storage
6689461 False twisted yarn of polyester composite fiber and method for production thereof February 10, 2004
The invention provides false twisted yarn of a polyester composite fiber characterized in that the fiber is composed of single-filaments which are laminated with two types of polyester components in a side-by-side or eccentrical core/sheath fashion, at least one of the two polyester
6682815 Stretched yarn pirn January 27, 2004
The invention provides a poly(trimethylene terephthalate) drawn yarn pirn. The drawn yarn pirn of the invention comprises poly(trimethylene terephthalate) drawn yarn having an intrinsic viscosity of 0.7-1.3 dl/g, a heat shrinkage stress-exhibiting initial temperature of 55.degree. C. or
6673443 Polyester conjugate fiber pirn and method for producing same January 6, 2004
The present invention provides a polyester-based conjugate fiber pirn that is formed by winding, in a pirn shape, a conjugate fiber wherein the fiber is formed from a single filament prepared by combining two types of polyester components in a side-by-side manner or in an eccentric s
6656540 Method for forming metallic film and apparatus for forming the same December 2, 2003
The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, the present invention relates to a
6620505 Poly(trimethylene terephthalate) modified cross-section yarn September 16, 2003
The present invention is to provide a polytrimethylene terephthalate fiber having a trilobal type modified cross-section, composed of 95 mol % or more of trimethylene terephthalate repeating units and 5 mol % or less of other ester repeating units to have an intrinsic viscosity in a rang
6583029 Production method for silicon wafer and SOI wafer, and SOI wafer June 24, 2003
There are provided a method for manufacturing a mirror polished wafer with little polishing sag (peripheral sag) by a relatively easy method, a method for manufacturing a bonded wafer having an SOI layer or a bond layer which has no periphery removing region or reduces it, and a bonded
6572967 Poly(trimethylene terephthalate) multifilament yarn June 3, 2003
The present invention provides a yarn suitable for stretch clothing, which yarn is a polytrimethylene terephthalte multifilamentary yarn having an intrinsic viscosity in a range from 0.7 to 1.1 dl/g, a single-filament size in a range from 3.3 to 8.9 dtex, an elongation at break in a rang
6555220 Composite fiber having favorable post-treatment processibility and method for producing the same April 29, 2003
The present invention provides a polytrimethylene terephthalate composite fiber characterized in that the composite fiber is a plurality of single filament which comprises two kinds of polyester components laminated to each other in a side-by-side manner or an eccentric sheath-core manne
6551398 Heat treatment method for a silicon monocrystal wafer and a silicon monocrystal wafer April 22, 2003
There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrys
6544656 Production method for silicon wafer and silicon wafer April 8, 2003
A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 .OMEGA..multidot.cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and sub
6538285 Silicon wafer March 25, 2003
The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid
6498288 Silicon germanium crystal December 24, 2002
Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5.times.10.sup.-5 mm.sup.
6495254 Poly(trimethylene terephthalate) fiber December 17, 2002
According to the present invention, polytrimethylene terephthalate fiber is provided, which is high in toughness, uniform in fiber size and excellent in dyeing uniformity, whereby it is extremely suitable for a clothing use.Polytrimethylene terephthalate fiber according to the present invent
6479478 Carbapenem compounds November 12, 2002
It is provided carbapenem compounds represented by the following formula (I): ##STR1##wherein R is hydrogen atom, or substituted or unsubstituted lower alkyl group; and, n is an integer of 1 or 2,or a pharmaceutically acceptable salt thereof, and an antibacterial compositions conta
6473822 Digital signal processing apparatus October 29, 2002
A digital signal processing apparatus for processing a plurality of video signals and a plurality of audio signals is provided, and comprises a computer comprising a system bus and a main CPU connected to the system bus and an extension processor comprising a plurality of signal processi
6423407 Polytrimethylene terephthalate fiber July 23, 2002
A polytrimethylene terephthalate fiber composed of a polytrimethylene terephthalate (PTT) comprising not less than 95 mole % of a polytrimethylene terephthalate repeating unit and having an intrinsic viscosity of from 0.7 to 1.3, wherein the fiber satisfies the following features:
6403502 Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method June 11, 2002
There is disclosed a heat treatment method for a silicon wafer in which the silicon wafer is heat treated in a reducing atmosphere through use of a rapid heating/rapid cooling apparatus. The silicon wafer is heat treated for a period of 1 to 60 seconds at a temperature in the range of
6380551 Optical function device with photonic band gap and/or filtering characteristics April 30, 2002
A stacked material free from a degraded quality of crystal, formed with a precise periodicity, and fabricated without relying on the vapor phase growth method is provided. An optical function device using the stacked material is also provided. A starting stacked material composed of two
6333279 Method for producing silicon wafer and silicon wafer December 25, 2001
The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid
6285820 Video tape recorder September 4, 2001
In a video tape recorder for recording a video signal having a first field frequency and a video signal a second field frequency, substantial centers 11a of lengths of recording tracks, on a magnetic tape 7, for the video signals having the first and second field frequencies are recorded
6204188 Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method March 20, 2001
There is disclosed a heat treatment method for a silicon wafer. A silicon wafer, on which a natural oxide film is formed at least at the surface thereof, is loaded directly into a heat treatment furnace heated to a temperature within a temperature range of 1000.degree. C. to the melting
5978167 Disk unit creating a position sensitivity correction value using positive and negative cross poi November 2, 1999
An actuator is provided with a step so as to allow FPC mounting surfaces of a read/write FPC band and of a relay FPC to be level with each other. Pointer information P4 in a ROM table is used to refer to a RAM table to acquire offset correction data.On-track control is effected at a cros
5911822 Method of manufacturing silicon monocrystal, and seed crystal used in the method June 15, 1999
In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is the
5886172 Carbapenem-3-carboxylic acid ester derivatives March 23, 1999
Disclosed are carbapenem-3-carboxylic acid ester derivatives of formula (I), wherein R.sup.1 is a hydrogen atom or a lower alkyl group, R.sup.2 is an alkyl group which may be substituted by a cycloalkyl group having about 4 to 7 carbon atoms and which may be substituted by a lower alkyl
5848220 High definition digital video recorder December 8, 1998
A digital video tape recorder with a standard image quality mode that minimizes recording time and a high image quality mode that maximizes image quality is realized using the same hardware for both modes. Compression circuitry is simplified and power requirements are reduced by band
5783703 Sulfur-containing compounds method for their use and prodction July 21, 1998
A first embodiment of the invention relates to novel carbapenem compounds, (1R, 5S, 6S)-2-[1-(1,3-thiazolin-2-yl)azetidin-3-yl]thio-6-[(R)-1-hydroxy-ethyl]-1- methylcarbapen-2-em-3-carboxyic acid derivatives. These carbapenem compounds are represented by the following formula having a
5769544 Dynamic pressure pneumatic bearing device and manufacturing method thereof June 23, 1998
A dynamic pressure pneumatic bearing device has a groove for generating a dynamic pressure and formed on an inner circumferential face of a rotating shaft or an outer circumferential face of a fixed shaft; each of these shafts being formed by an aluminum alloy; and a wear resisting film
5738952 Enclosed-type secondary cell April 14, 1998
An enclosed-type secondary cell comprises a safety valve (5) made of a metal plate which is deformed with an increase of an internal pressure of the secondary cell, a current interrupting means (6) energized when said safety valve (5) is deformed, an annular gasket (15) for holding an ou
5679790 2-[1-(1,3-thiazolin-2-yl)azetidin-3-yl]thio-carbapenem derivatives October 21, 1997
Novel carbapenem compounds, (1R,5S,6S)-2-[1-(1,3-thiazolin-2-yl)azetidin-3-yl]thio-6-[(R)-1-hydroxyeth yl]-1-methyl-carbapen-2-em-3-carboxyic acid derivatives.These carbapenem compounds are represented by the following formula having a beta-coordinated methyl group introduced at the 1-pos
5606448 Polygon scanner and production process thereof February 25, 1997
A polygon scanner has a lighter rotating shaft on which a polygon mirror is mounted, to prevent a positional deviation of the polygon mirror from the rotating shaft in high speed rotation, in which the rotating shaft is supported through a dynamic pressure air bearing on a fixed shaft, i
5574591 Polygon scanner and production process thereof November 12, 1996
A polygon scanner has a lighter rotating shaft on which a polygon mirror is mounted, to prevent a positional deviation of the polygon mirror from the rotating shaft in high speed rotation, in which the rotating shaft is supported through a dynamic pressure air bearing on a fixed shaft, i
5558571 Portable grinder September 24, 1996
A grinder has a grinding member. The grinder includes a rotatable spindle having an engagement portion. A first flange engages the engagement portion of the spindle. The first flange and the engagement portion of the spindle define a given play therebetween in a direction of rotation. Th
5534510 2-[1-(1,3-thiazolin-2-yl)azetidin-3-yl]thio-carbapenem derivatives July 9, 1996
Novel carbapenem compounds, (1R,5S,6S)-2-[1-(1,3-thiazolin-2-yl)azetidin-3-yl]thio-6-[(R)-1-hydroxyeth yl]-1-methyl-carbapen-2-em-3 -carboxyic acid derivatives.These carbapenem compounds are represented by the following formula having a beta-coordinated methyl group introduced at the 1-po
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