| Patent Number |
Title Of Patent |
Date Issued |
| 6503803 |
Method of fabricating a semiconductor integrated circuit device for connecting semiconductor reg |
January 7, 2003 |
| Disclosed is a method of fabricating a semiconductor device including forming an insulating film on a silicon substrate; forming a contact hole in the insulating film; depositing a titanium film to be in contact with the silicon substrate in the contact hole; and causing a heat reaction |
| 6480418 |
Semiconductor non-volatile storage |
November 12, 2002 |
| The present invention proposes a non-volatile semiconductor storage, comprising a plurality of main bit lines, a plurality of sub bit lines connected to the main bit lines, and a plurality of memory cell arrays, each including a plurality of non-volatile semiconductor memory cells di |
| 6307780 |
Semiconductor non-volatile storage |
October 23, 2001 |
| The present invention proposes a non-volatile semiconductor storage, comprising a plurality of main bit lines, a plurality of sub bit lines connected to the main bit lines, and a plurality of memory cell arrays, each including a plurality of non-volatile semiconductor memory cells di |
| 6268658 |
Semiconductor integrated circuit device for connecting semiconductor region and electrical wirin |
July 31, 2001 |
| A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titan |
| 6122196 |
Semiconductor non-volatile storage device capable of a high speed reading operation |
September 19, 2000 |
| The present invention proposes a non-volatile semiconductor storage, comprising a plurality of main bit lines, a plurality of sub bit lines connected to the main bit lines, and a plurality of memory cell arrays, each including a plurality of non-volatile semiconductor memory cells di |
| 6031288 |
Semiconductor integrated circuit device for connecting semiconductor region and electrical wirin |
February 29, 2000 |
| A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titan |
