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Hironobu Abe Patents
Inventor:
Abe; Hironobu
Address:
Tokyo, JP
No. of patents:
21
Patents:




Patent Number Title Of Patent Date Issued
7227186 Thin film transistor and method of manufacturing the same June 5, 2007
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at l
6963208 Probe device, probe card channel information creation program, and probe card information creati November 8, 2005
A probe device includes a supporting member for supporting the probe card having a plurality of channels. Each of the channels has a group of probes which are brought into contact with plural electrode pads of one of objects to be inspected. The probe device further includes a channel
6903371 Thin film transistor and display using the same June 7, 2005
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at l
6806099 Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by October 19, 2004
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of
6798144 Driving method of a flat type plasma discharge display device September 28, 2004
In a flat type plasma discharge display device which includes a discharge sustaining electrode group (X) having first and second discharge sustaining electrodes and an address electrode group (Y) having address electrodes, a plurality of plasma discharge parts (P) are formed for one
6716688 Irradiation of manufacturing a thin film transistor by laser irradiation April 6, 2004
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at l
6670638 Liquid crystal display element and method of manufacturing the same December 30, 2003
Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersin
6657227 Transistor with thin film active region having clusters of different crystal orientation December 2, 2003
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at l
6512499 Flat plasma discharge display device January 28, 2003
A flat plasma discharge display device comprises a first substrate 1 and second substrate 2 which are provided opposite to each other, and address electrode group 13 having a plurality of address electrodes A arranged in parallel, a first discharge maintaining electrode group 11 having a
6411033 Flat type plasma discharge display device with discharge start parts June 25, 2002
In a flat type plasma a discharge display device which includes a discharge sustaining electrode group (X) having first and second discharge sustaining electrodes and an address electrode group (Y) having address electrodes, a plurality of plasma discharge parts (P) are formed for one
6344885 Liquid crystal display device February 5, 2002
A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second
6255131 Liquid crystal display device July 3, 2001
A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over th
6177914 Plasma addressed electro-optical display January 23, 2001
The plasma addressed electro-optical display includes a panel having a plasma cell and a liquid crystal cell joined to each other with a dielectric sheet interposed in between. While the plasma cell has display channels arranged thereon in rows, the liquid crystal panel has signal el
6144972 Moving image anchoring apparatus which estimates the movement of an anchor based on the movement November 7, 2000
A moving image anchor setting apparatus for setting an anchor to a moving image including a frame specification portion for specifying a first frame from among a plurality of frames constituting the moving image; an anchor setting portion for setting an anchor by selecting a particular r
6140774 Planar type plasma discharge display device and drive method October 31, 2000
A first electrode group and a second electrode group each being formed by planarly arraying a plurality of electrodes on a common substrate are arrayed such that the electrodes cross over through an insulating layer. A common discharge electrode portion is arranged between each pair of
6081245 Plasma-addressed liquid crystal display device June 27, 2000
A plasma-addressed liquid crystal display device owns a flat panel structure such that a liquid crystal cell and a plasma cell are stacked to each other via an intermediate glass thin plate. The liquid crystal cell is equipped with a column-shaped data electrode and a liquid crystal
6052102 Plasma addressed electro-optical display April 18, 2000
A plasma addressed electro-optical display including a first substrate having a plurality of discharge electrodes formed thereon; a dielectric layer disposed apart from the first substrate for a predetermined distance; a plasma cell formed by sealing the peripheries of the first subs
5970504 Moving image anchoring apparatus and hypermedia apparatus which estimate the movement of an anch October 19, 1999
A moving image anchor setting apparatus including a data operation portion for executing data operation relating to setting of anchors and links; a data storage portion for storing the data; a display portion for controlling display; and a user operation portion for inputting editing
5894333 Representative image display method, representative image display apparatus, and motion image se April 13, 1999
A video. source, such as a VCR, plays back a motion image which is input by an image input section. Partition of scenes and creation of images representing scenes are performed by a catalog creation section. Additionally, at this time, an image representing the movement of an object
5448387 Liquid crystal display device having tape carrier with semiconductor device on flap portion September 5, 1995
A liquid crystal display device using a tape carrier packaged semiconductor device, which is designed to prevent a crack from developing in part of its resin mold. The semiconductor device is provided with a film-like substrate, a group of electrodes including a plurality of parallel
5223746 Packaging structure for a solid-state imaging device with selectively aluminium coated leads June 29, 1993
A packaging structure is provided which is especially useful for solid-state imaging devices and other semiconductor devices. An Al film is selectively formed on inner lead portions and portions of positioning reference plates located within a ceramic packaging body. On the other han


 
 
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