A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane o
A semiconductor light-emitting device includes a substrate formed of an AlGaAs-base semiconductor material. A light-emitting layer forming portion of an AlGaInP-base compound semiconductor material is formed on the substrate so as to provide a light emitting layer. On the surface of the
