| Patent Number |
Title Of Patent |
Date Issued |
| 7268596 |
Semiconductor device for driving a load |
September 11, 2007 |
| A semiconductor device for driving a load includes a first semiconductor switching element interposed between a power supply terminal and a load, a second semiconductor switching element interposed between the load and a ground terminal, a high-side driver, a low-side driver, and a volta |
| 7210865 |
Automatic developing apparatus and process for forming image using the same |
May 1, 2007 |
| A photographic light-sensitive material having a support having a thickness of from 160 to 225 .mu.m is processed with an automatic developing apparatus, in which at least one of rollers of a developing part, a fixing part and a rinsing rack part of the automatic developing apparatus |
| 7183802 |
Semiconductor output circuit |
February 27, 2007 |
| The semiconductor output circuit of the invention has an insulated gate transistor including a first terminal, a second terminal and a gate terminal, a conductive state of the insulated gate transistor being controlled by a drive circuit connected to the gate terminal, a capacitive e |
| 7034616 |
Operational amplification circuit, overheat detecting circuit and comparison circuit |
April 25, 2006 |
| In a circuit according to the present invention, a multi-collector transistor is provided which includes first to third collectors so that, when a current does not flow from the second collector, a current from the first collector increases but a current from the third collector does |
| 6982496 |
Semiconductor device having bump electrode and support area |
January 3, 2006 |
| A semiconductor device includes a substrate, a plurality of bump electrodes disposed on the substrate, and a support area for supporting the substrate in case of carrying the substrate. The support area is disposed on a surface of the substrate, on which the bump electrode is dispose |
| 6972973 |
Voltage booster having noise reducing structure |
December 6, 2005 |
| In a voltage booster, a voltage detection circuit detects a battery voltage as an input voltage. If the input voltage is lower than a threshold level, an oscillation circuit outputs a gate signal having a relatively high frequency to increase the driving performance of a driving circuit. |
| 6903460 |
Semiconductor equipment |
June 7, 2005 |
| Semiconductor equipment includes a semiconductor substrate, a plurality of transistors having a source cell and a drain cell disposed alternately on the substrate, and upper and lower layer wirings for electrically connecting the source cells and the drain cells. The lower layer wiring |
| 6876180 |
Power supply circuit having a start up circuit |
April 5, 2005 |
| A reference voltage circuit and an operational amplifier operate when an output voltage is produced from an output terminal of a power supply circuit. When the output voltage is low in the rising phase of a power source voltage, a transistor Q17 in a startup circuit turns on and a tr |
| 6794921 |
Clamp circuit |
September 21, 2004 |
| In the clamp circuit, the first transistor shifts a target clamp voltage by a gate-source voltage to output the target clamp voltage. The buffer circuit inputs the shifted voltage and output a reference voltage on the inputted shifted voltage. The gate of the second transistor is connect |
| 6789675 |
Light-sensitive material package |
September 14, 2004 |
| A light-sensitive material package includes a light-shielding envelope containing a stack of sheet-form light-sensitive material, the light-shielding envelope having heat-seal parts on four edges. The light-sensitive material package further includes a cushioning member, which holds |
| 6614282 |
Clamp circuit for a semiconductor integrated circuit device |
September 2, 2003 |
| A comparator, having an offset of 0.1V, compares a terminal voltage Vin1 with a clamp voltage V.sub.CL (5.1V). When an overvoltage input exceeding the V.sub.CL is entered to an input terminal, the comparator turns on a transistor Q11. The current flows across an externally provided resis |
| 6375008 |
Light shielding packaging system for photosensitive web roll |
April 23, 2002 |
| A light-shielding packaging for a roll of continuous photosensitive web wound on a core having on its each end a light-shielding flange disc has at its leading end a heat-shrinkable light-shielding leader sheet having a thickness of 30 to 200 .mu.m which shows a heat shrinkage ratio at |
| 6179123 |
Light-Shielding packaging system for photosensitive web roll |
January 30, 2001 |
| A light-shielding packaging for a roll of continuous photosensitive web wound on a core having on its both ends a light-shielding flange disc has at its leading end a heat-shrinkable light-shielding leader sheet having a thickness of 30 to 200 .mu.m which shows a heat shrinkage ratio of |
| 5855334 |
Rectangular parallelepipedic case and method of producing the same |
January 5, 1999 |
| A rectangular parallelepipedic case includes four or more walls formed by bending a single plate. To produce the case, a double plate is used. The double plate is formed from plastic by extrusion, and first and second plate elements confronted with each other. Partition portions intercon |
| 5846211 |
Occlusal force-meter |
December 8, 1998 |
| An occlusal force-meter 1 includes an occlusal force detecting portion 2 for detecting an occlusal force and a main body 3 for processing the detected signal obtained by the occlusal force detecting portion 2 to display the occlusal force measured value on a display 4. The occlusal f |
| 5806786 |
Web roll container |
September 15, 1998 |
| A container, for example a photographic paper magazine, includes a core about which photographic paper is wound in a form of a roll. A container body contains the roll with the core in a rotatable manner. An outlet slit is formed in the container body and adapted to drawing out the p |
| 5716864 |
Method of manufacturing a non-volatile semiconductor memory device with peripheral transistor |
February 10, 1998 |
| A first insulating film for the formation of a gate insulating film is formed on a semiconductor substrate having a memory cell forming region and a peripheral transistor forming region. A first conductive film for the formation of a floating gate is formed on the first insulating film, |
| 5625218 |
Semiconductor device equipped with a heat-fusible thin film resistor and production method there |
April 29, 1997 |
| A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating fil |
| 5623442 |
Memory cells and memory devices with a storage capacitor of parasitic capacitance and informatio |
April 22, 1997 |
| An object of the present invention is to provide a DRAM of a special form, a non-volatile memory cell incorporating the DRAM, and a semiconductor device which incorporates a DRAM structure and a non-volatile memory cell and where data can be written and erased with high accuracy. The |
| 5444650 |
Semiconductor programmable read only memory device |
August 22, 1995 |
| A programmable semiconductor memory cell is provided; which secures a sufficient output signal voltage margin and which also has reduced current dissipation and improved durability. To program the programmable semiconductor memory cell of this invention, a high write potential is app |
