| Patent Number |
Title Of Patent |
Date Issued |
| 7382007 |
Solid-state image pickup device and manufacturing method for the same |
June 3, 2008 |
| A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical |
| 7352013 |
Solid-state imaging device and manufacturing method thereof |
April 1, 2008 |
| There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surfac |
| 7351598 |
Solid-stage image pickup device and method for producing the same |
April 1, 2008 |
| A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion |
| 7217961 |
Solid-state image pickup device and method for producing the same |
May 15, 2007 |
| A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion |
| 7105867 |
Solid-state imaging device and manufacturing method thereof |
September 12, 2006 |
| There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surfac |
| 7087939 |
Solid-state imaging device and manufacturing method thereof |
August 8, 2006 |
| There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface |
| 7084443 |
Solid-state image pickup device and manufacturing method for the same |
August 1, 2006 |
| A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical |
| 7041956 |
Solid-state image pickup device with non-hydrogen-absorbing waveguide |
May 9, 2006 |
| A solid-state image pickup device 100 is constructed in which a waveguide 15 is formed in an insulating layer on a light-receiving sensor portion 2, a side wall 161 of the waveguide 15 is covered with a reflective film 17 made of an Al film deposited by a CVD method, an underlayer film 1 |
| 6867438 |
Solid-state imaging device and manufacturing method thereof |
March 15, 2005 |
| There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surfac |
| 6774444 |
Semiconductor, solid-state imaging device, and method for making the same |
August 10, 2004 |
| A method for making a solid-state imaging device that can form a first P-type well region deep in a substrate without being affected by the heat applied during an epitaxial growth process is disclosed. The method includes a first step of preparing a substrate composite comprising an |
| 6750159 |
Semiconductor apparatus, manufacturing method therefor, solid state image device and manufacturi |
June 15, 2004 |
| An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage V.sub.th of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surf |
| 6599772 |
Solid-state pickup element and method for producing the same |
July 29, 2003 |
| A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrate upward of the overflow barrier |
| 6521920 |
Solid state image sensor |
February 18, 2003 |
| A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge collecting region of the photo-sens |
| 6436729 |
Process for producing solid image pickup device and solid image pickup device |
August 20, 2002 |
| A process for producing a solid image pickup device is demanded that can enhance a photoelectric conversion region by forming an overflow barrier layer at a deep position and can prevents generation of radiation due to the use of resist as a mask. Upon producing a solid image pickup devi |
| 6312969 |
Solid-state imaging sensor, manufacturing method thereof and imaging device |
November 6, 2001 |
| A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light cons |
| 6278154 |
Semiconductor apparatus and solid state imaging device |
August 21, 2001 |
| An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage V.sub.th of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surf |
| 6252219 |
Solid-state imaging element |
June 26, 2001 |
| A solid-state imaging element is able to maximize a sensitivity relative to various kinds of light sources having different incident angles. In a solid-state imaging element (20), a maximum inclination angle (max of a curved surface (S.sub.L) of an interlayer lens (11) relative to a surf |
| 6246081 |
Solid-state imaging sensor, manufacturing method thereof and imaging device |
June 12, 2001 |
| A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light cons |
| 5869352 |
Method of manufacturing an amplifying solid-state imaging device |
February 9, 1999 |
| In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (2 |
| 5808333 |
Amplifying type solid-state imaging device and method of manufacturing the same |
September 15, 1998 |
| In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (2 |
| 5581099 |
CCD solid state image device which has a semiconductor substrate with a P-type region with an N- |
December 3, 1996 |
| In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is for |
| 5576570 |
Semiconductor device having CMOS circuit |
November 19, 1996 |
| Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type se |
| 5476808 |
Method of making CCD solid state image sensing device |
December 19, 1995 |
| In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is for |
| 5343060 |
Apparatus for reducing mirror in a solid state imaging device wherein a light intercepting layer |
August 30, 1994 |
| The present invention is directed to a solid state imaging deice in which a light sensing region (3), a vertical register (4) and a channel stopper region (5) are formed within a well region (2) on an N-type silicon substrate (1). A positive electric charge storage region (6) is formed o |
| 5334829 |
Package for solid state imager with heating means to repair imager lattice defect |
August 2, 1994 |
| A CCD image sensor includes a package (2) in which there are packaged a CCD solid state imaging device (1) in which a getter layer is formed on the rear surface of a silicon substrate and a photo-sensing portion and a CCD register are formed on the surface of the silicon substrate and a |
| 5288656 |
Method of manufacturing a CCD solid state image sensing device |
February 22, 1994 |
| In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is |
| 4345975 |
Process for preventing blockage in distillation column of treatment apparatus for ammoniacal was |
August 24, 1982 |
| In an apparatus for treatment of an ammoniacal waste liquid comprising a reaction tank for effecting a decomposition reaction of fixed ammonia by adding a calcium series alkali so as to obtain a reaction product comprising free ammonia and a calcium salt, a solid-liquid separator for |
