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Hidenori Abe Patents
Inventor:
Abe; Hidenori
Address:
Tokyo, JP
No. of patents:
13
Patents:




Patent Number Title Of Patent Date Issued
7220995 Substrate for electronic device, electronic device and methods of manufacturing same May 22, 2007
A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate
6989723 Piezoelectric resonant filter and duplexer January 24, 2006
A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite
6855996 Electronic device substrate structure and electronic device February 15, 2005
An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-or
6709776 Multilayer thin film and its fabrication process as well as electron device March 23, 2004
The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a
6372351 Encapsulant epoxy resin composition and electronic device April 16, 2002
In the present invention, provided are i) an encapsulant epoxy resin composition comprising an epoxy resin, a curing agent, a non-conductive carbon and an inorganic filler, and ii) an electronic device having an encapsulating member comprising a cured product of this composition.
6259187 Piezoelectric bulk acoustic wave device July 10, 2001
An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when appli
6198208 Thin film piezoelectric device March 6, 2001
A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is
5877661 Surface acoustic wave filter with optimally sized gaps between transducers March 2, 1999
A surface acoustic wave filter comprises a first electrode structure array which is formed on the piezoelectric substrate, and includes an input/output IDT, two receipt IDTs formed outside the input/output IDT and two reflectors formed outside the two receipt IDTs, and a second electrode
5850167 Surface acoustic wave device December 15, 1998
A first electrode structure row formed on a piezoelectric substrate, and including N1 pairs of an input/output IDT, N2 pairs of a connection IDT, and reflectors is cascade-connected to a second electrode structure row formed on the piezoelectric substrate, and including N1 pairs of an
5840732 Imidazopyridine or imidazopyrimidine compounds, their production and use November 24, 1998
This invention provides a new condensed imidazole compound possessing inhibitory activity of adhesion molecule expression.This invention also provides a therapeutic and prophylactic agent for diabetic nephritis and/or autoimmune disease and an immunosuppressor for organ transplantation.
5585684 Surface acoustic wave device December 17, 1996
A surface acoustic wave device comprises, on a lithium tetraborate substrate 10, a central interdigital transducer 21, 31, and first and second interdigital transducers 22, 23, 32, 33 disposed adjacently on both sides of the central interdigital transducer 21, 31 in a propagation dir
5434465 Surface acoustic wave device July 18, 1995
A surface acoustic wave device comprises a piezoelectric substrate of lithium tetraborate single crystal, and a metal film formed on the surface of the piezoelectric substrate for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed th
5302877 Surface acoustic wave device April 12, 1994
A surface acoustic wave device comprises lithium tetraborate single crystal substrate to make use of surface acoustic waves with higher propagation velocities and smaller propagation losses, whereby frequencies to be signal-processed can be as high as above 1 GHz. The surface acoustic wa


 
 
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