| Patent Number |
Title Of Patent |
Date Issued |
| 4454166 |
Process for preparing semiconductor device |
June 12, 1984 |
| A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer. |
| 4438368 |
Plasma treating apparatus |
March 20, 1984 |
| A plasma treating apparatus includes: an air-core coil for generating a static magnetic field which is axially uniform and a high-frequency waveguide for generating a high-frequency electromagnetic field which is irregular in the axial direction of the air-core coil. A plasma generating |
| 4377734 |
Method for forming patterns by plasma etching |
March 22, 1983 |
| Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which |
| 4341616 |
Dry etching device |
July 27, 1982 |
| A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etc |
| 4333226 |
Method of forming patterned refractory metal films by selective oxygen implant and sublimation |
June 8, 1982 |
| A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and |
| 4314874 |
Method for forming a fine pattern of an aluminum film |
February 9, 1982 |
| A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent t |
