Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/ Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 .mu.m) silicon-on-insulator (SOI) substrates or s
Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exem
A piezoelectric resonator is disclosed. In one embodiment the piezoelectric resonator includes a resonating member having a bi-directionally adjustable resonance frequency, the resonating member including a semiconductor material of a semiconductor-on-insulator wafer, the semiconduct
