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de Blank; Rene
Heverlee, BE
No. of patents:

Patent Number Title Of Patent Date Issued
7829457 Protection of conductors from oxidation in deposition chambers November 9, 2010
In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitri
7629267 High stress nitride film and method for formation thereof December 8, 2009
A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of th
5922624 Method for semiconductor processing using mixtures of HF and carboxylic acid July 13, 1999
Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually

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