| Patent Number |
Title Of Patent |
Date Issued |
| 7553678 |
Method for detecting semiconductor manufacturing conditions |
June 30, 2009 |
| A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring |
| 7527900 |
Reticle and optical proximity correction method |
May 5, 2009 |
| An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the c |
| 7238619 |
Method for eliminating bridging defect in via first dual damascene process |
July 3, 2007 |
| A via-first dual damascene process is disclosed. When forming trench lines directly above two small pitched, dense via openings having diameter that is substantially equal to the line width of the trench lines, the trench photoresist is biased on the via openings to partially mask the si |
| 6777145 |
In-line focus monitor structure and method using top-down SEM |
August 17, 2004 |
| The present invention relates to a test structure which is formed on a reticle simultaneously with a pattern that will be used to build an integrated circuit device. The test structure comprises a large rectangular end and several rectangular shapes that extend from one side of the r |
