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Inventor:
Zhou; Jie
Address:
Sunnyvale, CA
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
8133819 Plasma etching carbonaceous layers with sulfur-based etchants March 13, 2012
Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O.sub.2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric










 
 
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