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Inventor:
Zhang; Jiani
Address:
Santa Clara, CA
No. of patents:
3
Patents:












Patent Number Title Of Patent Date Issued
7948035 Decoding system capable of charging protection for flash memory devices May 24, 2011
The present invention relates to a flash memory array. The flash memory array includes at least two word lines of gate electrode material. At least one of the word lines is connected through a first metal level to a discharge circuit, while other word line(s) may connect to a discharge
7808827 Controlled bit line discharge for channel erases in nonvolatile memory October 5, 2010
Systems and/or methods that facilitate discharging bit lines (BL) associated with memory arrays in nonvolatile memory at a controlled rate are presented. A discharge component facilitates discharging the BL at a desired rate thus preventing the "hot switching" phenomenon from occurri
7613042 Decoding system capable of reducing sector select area overhead for flash memory November 3, 2009
Methods and apparatus are disclosed for erasing memory cells in a virtual ground memory core, wherein a row decoder apparatus employs a protective voltage to wordlines of a sector of cells while concurrently providing an erase voltage to selected wordlines of the same physical sector. De










 
 
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