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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Zanio; Kenneth R.
Address:
Agoura, CA
No. of patents:
2
Patents:




Patent Number Title Of Patent Date Issued
4171235 Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition s October 16, 1979
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars
4128733 Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fa December 5, 1978
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars


 
 
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