| Patent Number |
Title Of Patent |
Date Issued |
| 7576008 |
Method for forming buried contact electrode of semiconductor device having pn junction and optoe |
August 18, 2009 |
| Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode in a depth direction to form a plurality of continuous, isolated or mixed type electrode |
| 7569307 |
Laser mask and crystallization method using the same |
August 4, 2009 |
| A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a |
| 7553715 |
Crystallization method and apparatus thereof |
June 30, 2009 |
| A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and second regions, performing a first crystallization by irradiating a laser beam on the fi |
| 7507645 |
Method of forming polycrystalline semiconductor layer and thin film transistor using the same |
March 24, 2009 |
| A method of forming a polycrystalline semiconductor layer includes forming a semiconductor layer of amorphous silicon on a substrate, forming a plurality of spot seeds in the semiconductor layer by irradiating a first laser beam through a crystallization mask, each of the plurality of sp |
| 7501211 |
Laser mask and crystallization method using the same |
March 10, 2009 |
| A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the sil |
| 7429760 |
Variable mask device for crystallizing silicon layer |
September 30, 2008 |
| Disclosed are a variable mask device for crystallizing a silicon layer capable of controlling a width and a length of an opening, and a method for crystallizing a silicon using the variable mask device. The variable mask device has a frame with an opening whose width is controlled by an |
| 7384476 |
Method for crystallizing silicon |
June 10, 2008 |
| A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the transmission patte |
| 7368204 |
Mask for laser crystallization and crystallization method using the same |
May 6, 2008 |
| A mask for laser crystallization includes a transmissive portion defining a crystallization pattern and an alignment pattern. The alignment pattern includes a first pattern group having a size corresponding to the crystallization pattern and a second pattern group having a plurality of |
| 7364821 |
Laser mask and method of crystallization using the same |
April 29, 2008 |
| Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N.times.M active regions are defined; positioning a laser mask having first and second blocks over the su |
| 7279383 |
Liquid crystal display device and method of fabricating the same |
October 9, 2007 |
| There is disclosed a liquid crystal display device and a fabricating method thereof that reduce the number of processes and production cost. A liquid crystal display device and a fabricating method thereof according to an embodiment of the present invention forms a poly-silicon pattern b |
| 7253010 |
Method of deciding focal plane and method of crystallization using thereof |
August 7, 2007 |
| A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test ma |
| 6949391 |
Method of fabricating bottom-gated polycrystalline silicon thin film transistor |
September 27, 2005 |
| A method of forming a thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an amorphous silicon layer on the gate insulating layer, crystallizing the amorphous silicon layer within an active region corre |
| 6800540 |
Method for crystallizing silicon |
October 5, 2004 |
| Disclosed is a method for crystallizing amorphous silicon, in which a substrate on which an amorphous silicon layer is formed is first prepared, and then a mask is disposed above the substrate. The mask is divided into first and second blocks, the first block having a plurality of first |
