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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yoshimochi; Kenichi
Address:
Kyoto, JP
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8193579 Trench type semiconductor device and fabrication method for the same June 5, 2012
The trench type semiconductor device includes a gate insulating film placed on the bottom surface and the sidewall surface of the trench formed from the surface of a first base layer; a gate electrode placed on the gate insulating film and fills up into a trench; an interlayer insula
8125025 Semiconductor device February 28, 2012
A semiconductor device (such as a MOSFET) can prevent a lowering in the reliability of a gate insulating film and can cope with a finer trench pattern. The MOSFET has a plurality of trenches penetrating a p.sup.--type doped region and a gate electrode formed on the interior surface o
7535075 Semiconductor device May 19, 2009
The semiconductor device includes a first conductive type semiconductor substrate; a Schottky electrode forming a Schottky interface between a surface of the semiconductor substrate and itself; a leakage suppression structure, formed in a surface region of the semiconductor substrate, fo
7470589 Semiconductor device December 30, 2008
A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device,
7459749 High speed power mosfet December 2, 2008
A semiconductor device provided with: a channel region formed in a surface of a semiconductor substrate in a predetermined depth range, a trench being formed in the surface as penetrating the channel region in a depthwise direction; a gate insulating film formed on an inside wall of
7276772 Semiconductor device October 2, 2007
A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery of the active regio
7259424 Semiconductor device having a trench with a step-free insulation film August 21, 2007
A method of manufacturing a semiconductor device provided with a MOS field effect transistor having a channel region of a first conduction type formed in a surface layer portion of a semiconductor substrate, a source region of a second conduction type formed on a rim portion of a trench
7205628 Semiconductor device April 17, 2007
A semiconductor device, including: a semiconductor substrate of a first conduction type; an active region used as a function-element-forming region on the semiconductor substrate; a low-resistance region of a second conduction type formed on an outermost periphery of the active regio
7166891 Semiconductor device with etch resistant electrical insulation layer between gate electrode and January 23, 2007
A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semiconductor device,
7091555 Semiconductor device for switching August 15, 2006
A semiconductor device provided with: a channel region of a first conductivity provided in a surface of a semiconductor substrate; a source region of a second conductivity different from the first conductivity, the source region being provided on an edge of a trench which extends thr
6833304 Semiconductor device and manufacturing method thereof December 21, 2004
A method of manufacturing a semiconductor device provided with a MOS field effect transistor having a channel region of a first conduction type formed in a surface layer portion of a semiconductor substrate, a source region of a second conduction type formed on a rim portion of a trench










 
 
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