| Patent Number |
Title Of Patent |
Date Issued |
| 7555026 |
Semiconductor laser device |
June 30, 2009 |
| A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at lea |
| 7555025 |
Semiconductor laser device |
June 30, 2009 |
| A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating |
| 7173273 |
Semiconductor laser device |
February 6, 2007 |
| A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-Al.sub.xGa.sub.1-xAs etching stopping layer, a p-AlGaInP second cladding lay |
| 6862311 |
Semiconductor laser device |
March 1, 2005 |
| A semiconductor laser device includes a lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has a disordered MQW structure, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In |
| 6819688 |
Semiconductor laser device and optical fiber amplifier |
November 16, 2004 |
| A semiconductor laser device comprises an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser light, and a coupling optical system for coupling the laser light emitted out of the sem |
| 6765944 |
Semiconductor laser device |
July 20, 2004 |
| A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second co |
| 6697406 |
Semiconductor device and photonic semiconductor device applying the semiconductor device |
February 24, 2004 |
| A semiconductor device and a photonic semiconductor device are disclosed wherein, if w is the thickness of a metal electrode layer covering a contact layer and current-unfed regions, D denotes the thickness of a plating layer on the metal electrode layer, the boundary between the con |
| 5844822 |
Simulation method for semiconductor device |
December 1, 1998 |
| A method for simulating and analyzing two-dimensional current and light distributions of a semiconductor laser including an active layer, a cladding layer, and a light absorbing layer includes obtaining initial values of light distribution and carrier distribution, setting a bias con |
| 5835516 |
Semiconductor laser device and method of fabricating semiconductor laser device |
November 10, 1998 |
| A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge struc |
