| Patent Number |
Title Of Patent |
Date Issued |
| 6897495 |
Field effect transistor and manufacturing method therefor |
May 24, 2005 |
| GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an Al.sub.0.2 Gao.sub.0.8 N electron supply layer are formed, together with n.sup.+ -type GaN contact regions sandwiching the electron transit and supply layers therebetween. On |
| 6768146 |
III-V nitride semiconductor device, and protection element and power conversion apparatus using |
July 27, 2004 |
| A GaN-based Schottky diode includes a sapphire substrate on which are formed a GaN buffer layer, an n.sup.+ -type GaN layer, and an n-type GaN layer that has a surface portion thereof shaped to form a protrusion having an upper face with which a Ti electrode forms a Schottky junction |
| 6674101 |
GaN-based semiconductor device |
January 6, 2004 |
| A GaN-based semiconductor device made of GaN-based semiconductor materials includes a bank made of a first undoped material and formed on a base layer, a thin layer made of a second undoped material having higher band-gap energy than the first undoped material and formed on a side wall |
| 6580101 |
GaN-based compound semiconductor device |
June 17, 2003 |
| A semiconductor device having a high breakdown and capable of operating with a large current is realized using GaN-based compound semiconductors which exhibit good electric characteristics. Particularly, a semiconductor material having a larger band gap than semiconductor materials formi |
| 6576927 |
Semiconductor device and GaN-based field effect transistor for use in the same |
June 10, 2003 |
| The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's each having a gate electrode, a |
| 6534801 |
GaN-based high electron mobility transistor |
March 18, 2003 |
| A GaN-based high electron mobility transistor (HEMT) has an undoped GaN layer where a two-dimensional electron gas layer is formed, the undoped GaN layer having a high electric resistivity enabling a pinch-off state to be obtained even when the gate bias voltage is 0 V. The GaN-based HEM |
| 6396085 |
GaN-type semiconductor vertical field effect transistor |
May 28, 2002 |
| A vertical field effect transistor having an MES-type structure high in withstand voltage and capable of high current operation is realized through effective use of GaN-type semiconductors. Specifically, a source electrode and a drain electrode are formed on the top and the bottom of a |
| 5342475 |
Method of growing single crystal of compound semiconductor |
August 30, 1994 |
| Disclosed is a method of growing a single crystal of a compound semiconductor, in which a compound semiconductor material is loaded in a vertical crucible and the compound semiconductor material is converted into a single crystal by utilizing a seed disposed in the center of the bott |
