| Patent Number |
Title Of Patent |
Date Issued |
| 8207044 |
Methods for oxidation of a semiconductor device |
June 26, 2012 |
| Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing l |
| 8056500 |
Thermal reactor with improved gas flow distribution |
November 15, 2011 |
| Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate sup |
| 8043981 |
Dual frequency low temperature oxidation of a semiconductor device |
October 25, 2011 |
| Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency |
| 7972441 |
Thermal oxidation of silicon using ozone |
July 5, 2011 |
| A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injecto |
| 7951728 |
Method of improving oxide growth rate of selective oxidation processes |
May 31, 2011 |
| A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphe |
| 7947561 |
Methods for oxidation of a semiconductor device |
May 24, 2011 |
| Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing l |
| 7547633 |
UV assisted thermal processing |
June 16, 2009 |
| The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radia |
| 6713127 |
Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
March 30, 2004 |
| An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are |
