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Inventor:
Yokota; Yoshitaka
Address:
San Jose, CA
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
8207044 Methods for oxidation of a semiconductor device June 26, 2012
Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing l
8056500 Thermal reactor with improved gas flow distribution November 15, 2011
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate sup
8043981 Dual frequency low temperature oxidation of a semiconductor device October 25, 2011
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency
7972441 Thermal oxidation of silicon using ozone July 5, 2011
A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injecto
7951728 Method of improving oxide growth rate of selective oxidation processes May 31, 2011
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphe
7947561 Methods for oxidation of a semiconductor device May 24, 2011
Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing l
7547633 UV assisted thermal processing June 16, 2009
The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radia
6713127 Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD March 30, 2004
An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are










 
 
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