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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yedur; Sanjay K.
Address:
Santa Clara, CA
No. of patents:
24
Patents:












Patent Number Title Of Patent Date Issued
6605855 CVD plasma process to fill contact hole in damascene process August 12, 2003
The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protectiv
6592932 Nozzle arm movement for resist development July 15, 2003
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path ha
6541184 Nozzle arm movement for resist development April 1, 2003
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresis
6479817 Cantilever assembly and scanning tip therefor with associated optical sensor November 12, 2002
A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sens
6455847 Carbon nanotube probes in atomic force microscope to detect partially open/closed contacts September 24, 2002
The present invention relates to a system for measuring a linewidth or profile of a feature and comprises a scanning probe microscope having a nanotube scanning tip. The nature of the nanotube scanning tip provides high resolution and accurate measurements which is generally independent
6452161 Scanning probe microscope having optical fiber spaced from point of hp September 17, 2002
A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sens
6451512 UV-enhanced silylation process to increase etch resistance of ultra thin resists September 17, 2002
In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 .ANG.; irradiating the ultra-thin re
6441349 System for facilitating uniform heating temperature of photoresist August 27, 2002
A system and method for facilitating uniform heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material. The system can include at least one heating element and a he
6437329 Use of carbon nanotubes as chemical sensors by incorporation of fluorescent molecules within the August 20, 2002
A system for analyzing a film and detecting a defect associated therewith includes a scanning probe microscope having a nanotube tip with a material associated therewith which exhibits a characteristic that varies with respect to a film composition at a location corresponding to the nano
6423479 Cleaning carbon contamination on mask using gaseous phase July 23, 2002
In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithogr
6396059 Using a crystallographic etched silicon sample to measure and control the electron beam width of May 28, 2002
A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sh
6376013 Multiple nozzles for dispensing resist April 23, 2002
A system and method is provided that facilitates the application of a uniform layer of photoresist material spincoated onto a semiconductor substrate (e.g wafer). The present invention accomplishes this end by utilizing a measurement system that measures the thickness uniformity of t
6373053 Analysis of CD-SEM signal to detect scummed/closed contact holes and lines April 16, 2002
A system is provided for detecting scumming in a wafer. The system includes an analysis system for providing a signal corresponding to a surface portion of the wafer and a processing system operatively coupled to the analysis system. The processing system is configured to determine a sha
6371134 Ozone cleaning of wafers April 16, 2002
In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of
6326231 Use of silicon oxynitride ARC for metal layers December 4, 2001
In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a
6270579 Nozzle arm movement for resist development August 7, 2001
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresis
6248175 Nozzle arm movement for resist development June 19, 2001
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path ha
6245493 Method for reducing surface reflectivity by increasing surface roughness June 12, 2001
A method for creating a roughened surface on a material exposed to light during a photolithographic process is provided. The roughened surface is created on a surface of the material via a plasma etch process. The roughened surface diffuses light incident to the material such that the
6197455 Lithographic mask repair using a scanning tunneling microscope March 6, 2001
A method of repairing defects in a photomask used in the formation of a semiconductor wafer includes the use of a scanning tunneling microscope. The scanning tunneling microscope includes a very sharp tip having a diameter on the order of 100 .ANG. or less. In order to remove excess
6191046 Deposition of an oxide layer to facilitate photoresist rework on polygate layer February 20, 2001
A method of reworking a photoresist used to pattern a semiconductor structure is provided. A dielectric layer is formed over an anti-reflective coating, the anti-reflective coating covering a first underlayer, the first underlayer covering a second underlayer. A first photoresist lay
6190062 Cleaning chamber built into SEM for plasma or gaseous phase cleaning February 20, 2001
One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber
6187666 CVD plasma process to fill contact hole in damascene process February 13, 2001
The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protectiv
6057914 Method for detecting and identifying a lens aberration by measurement of sidewall angles by atom May 2, 2000
The present invention provides a method of detecting a lens aberration in a semiconductor production process, comprising the steps of:forming a feature on a substrate by a process including a step of exposing a radiation-sensitive material to radiation, wherein said radiation passes thro
6034771 System for uniformly heating photoresist March 7, 2000
A system for regulating heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material, for example. The system includes a plurality of optical fibers, each optical fibe










 
 
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