| Patent Number |
Title Of Patent |
Date Issued |
| 6605855 |
CVD plasma process to fill contact hole in damascene process |
August 12, 2003 |
| The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protectiv |
| 6592932 |
Nozzle arm movement for resist development |
July 15, 2003 |
| A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path ha |
| 6541184 |
Nozzle arm movement for resist development |
April 1, 2003 |
| A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresis |
| 6479817 |
Cantilever assembly and scanning tip therefor with associated optical sensor |
November 12, 2002 |
| A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sens |
| 6455847 |
Carbon nanotube probes in atomic force microscope to detect partially open/closed contacts |
September 24, 2002 |
| The present invention relates to a system for measuring a linewidth or profile of a feature and comprises a scanning probe microscope having a nanotube scanning tip. The nature of the nanotube scanning tip provides high resolution and accurate measurements which is generally independent |
| 6452161 |
Scanning probe microscope having optical fiber spaced from point of hp |
September 17, 2002 |
| A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sens |
| 6451512 |
UV-enhanced silylation process to increase etch resistance of ultra thin resists |
September 17, 2002 |
| In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 .ANG.; irradiating the ultra-thin re |
| 6441349 |
System for facilitating uniform heating temperature of photoresist |
August 27, 2002 |
| A system and method for facilitating uniform heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material. The system can include at least one heating element and a he |
| 6437329 |
Use of carbon nanotubes as chemical sensors by incorporation of fluorescent molecules within the |
August 20, 2002 |
| A system for analyzing a film and detecting a defect associated therewith includes a scanning probe microscope having a nanotube tip with a material associated therewith which exhibits a characteristic that varies with respect to a film composition at a location corresponding to the nano |
| 6423479 |
Cleaning carbon contamination on mask using gaseous phase |
July 23, 2002 |
| In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithogr |
| 6396059 |
Using a crystallographic etched silicon sample to measure and control the electron beam width of |
May 28, 2002 |
| A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sh |
| 6376013 |
Multiple nozzles for dispensing resist |
April 23, 2002 |
| A system and method is provided that facilitates the application of a uniform layer of photoresist material spincoated onto a semiconductor substrate (e.g wafer). The present invention accomplishes this end by utilizing a measurement system that measures the thickness uniformity of t |
| 6373053 |
Analysis of CD-SEM signal to detect scummed/closed contact holes and lines |
April 16, 2002 |
| A system is provided for detecting scumming in a wafer. The system includes an analysis system for providing a signal corresponding to a surface portion of the wafer and a processing system operatively coupled to the analysis system. The processing system is configured to determine a sha |
| 6371134 |
Ozone cleaning of wafers |
April 16, 2002 |
| In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of |
| 6326231 |
Use of silicon oxynitride ARC for metal layers |
December 4, 2001 |
| In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a |
| 6270579 |
Nozzle arm movement for resist development |
August 7, 2001 |
| A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresis |
| 6248175 |
Nozzle arm movement for resist development |
June 19, 2001 |
| A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path ha |
| 6245493 |
Method for reducing surface reflectivity by increasing surface roughness |
June 12, 2001 |
| A method for creating a roughened surface on a material exposed to light during a photolithographic process is provided. The roughened surface is created on a surface of the material via a plasma etch process. The roughened surface diffuses light incident to the material such that the |
| 6197455 |
Lithographic mask repair using a scanning tunneling microscope |
March 6, 2001 |
| A method of repairing defects in a photomask used in the formation of a semiconductor wafer includes the use of a scanning tunneling microscope. The scanning tunneling microscope includes a very sharp tip having a diameter on the order of 100 .ANG. or less. In order to remove excess |
| 6191046 |
Deposition of an oxide layer to facilitate photoresist rework on polygate layer |
February 20, 2001 |
| A method of reworking a photoresist used to pattern a semiconductor structure is provided. A dielectric layer is formed over an anti-reflective coating, the anti-reflective coating covering a first underlayer, the first underlayer covering a second underlayer. A first photoresist lay |
| 6190062 |
Cleaning chamber built into SEM for plasma or gaseous phase cleaning |
February 20, 2001 |
| One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber |
| 6187666 |
CVD plasma process to fill contact hole in damascene process |
February 13, 2001 |
| The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protectiv |
| 6057914 |
Method for detecting and identifying a lens aberration by measurement of sidewall angles by atom |
May 2, 2000 |
| The present invention provides a method of detecting a lens aberration in a semiconductor production process, comprising the steps of:forming a feature on a substrate by a process including a step of exposing a radiation-sensitive material to radiation, wherein said radiation passes thro |
| 6034771 |
System for uniformly heating photoresist |
March 7, 2000 |
| A system for regulating heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material, for example. The system includes a plurality of optical fibers, each optical fibe |
