| Patent Number |
Title Of Patent |
Date Issued |
| 8142673 |
Compositions for dissolution of low-k dielectric films, and methods of use |
March 27, 2012 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 7868369 |
Localized masking for semiconductor structure development |
January 11, 2011 |
| Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr |
| 7759053 |
Methods of fabricating integrated circuitry |
July 20, 2010 |
| The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conduct |
| 7642157 |
Method for enhancing electrode surface area in DRAM cell capacitors |
January 5, 2010 |
| Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a |
| 7582570 |
Compositions for removal of processing byproducts and method for using same |
September 1, 2009 |
| A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine co |
| 7573121 |
Method for enhancing electrode surface area in DRAM cell capacitors |
August 11, 2009 |
| Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a |
| 7521373 |
Compositions for dissolution of low-k dielectric films, and methods of use |
April 21, 2009 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 7482176 |
Etch mask and method of forming a magnetic random access memory structure |
January 27, 2009 |
| A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer |
| 7468534 |
Localized masking for semiconductor structure development |
December 23, 2008 |
| Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr |
| 7432214 |
Compositions for dissolution of low-k dielectric film, and methods of use |
October 7, 2008 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 7422639 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
September 9, 2008 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 7419768 |
Methods of fabricating integrated circuitry |
September 2, 2008 |
| The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conduct |
| 7402879 |
Layered magnetic structures having improved surface planarity for bit material deposition |
July 22, 2008 |
| The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a materia |
| 7399424 |
Compositions for dissolution of low-k dielectric films, and methods of use |
July 15, 2008 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 7384727 |
Semiconductor processing patterning methods |
June 10, 2008 |
| The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer over a different first composition resist layer. Overlapping portions of the first and secon |
| 7375388 |
Device having improved surface planarity prior to MRAM bit material deposition |
May 20, 2008 |
| The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a materia |
| 7312159 |
Compositions for dissolution of low-k dielectric films, and methods of use |
December 25, 2007 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 7307306 |
Etch mask and method of forming a magnetic random access memory structure |
December 11, 2007 |
| A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer |
| 7285811 |
MRAM device for preventing electrical shorts during fabrication |
October 23, 2007 |
| The present invention provides an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. A first dielectric laye |
| 7261835 |
Acid blend for removing etch residue |
August 28, 2007 |
| A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, which removes the rema |
| 7204889 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
April 17, 2007 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 7163019 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
January 16, 2007 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. F |
| 7148555 |
Method for enhancing electrode surface area in DRAM cell capacitors |
December 12, 2006 |
| Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a |
| 7135444 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
November 14, 2006 |
| A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in |
| 7132299 |
Method of forming a magnetic random access memory structure |
November 7, 2006 |
| A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer |
| 7119388 |
MRAM device fabricated using chemical mechanical polishing |
October 10, 2006 |
| The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. |
| 7087561 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
August 8, 2006 |
| A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in |
| 7067466 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
June 27, 2006 |
| A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in |
| 7067465 |
Cleaning composition useful in semiconductor integrated circuit fabricating |
June 27, 2006 |
| A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in |
| 7018937 |
Compositions for removal of processing byproducts and method for using same |
March 28, 2006 |
| A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine co |
| 7015529 |
Localized masking for semiconductor structure development |
March 21, 2006 |
| Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr |
| 6896740 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
May 24, 2005 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. F |
| 6867148 |
Removal of organic material in integrated circuit fabrication using ozonated organic acid soluti |
March 15, 2005 |
| Organic acid components are used to increase the solubility of ozone in aqueous solutions for use in removing organic materials, such as polymeric resist and/or post-etch residues, from the surface of an integrated circuit device during fabrication. Each organic acid component is pre |
| 6864186 |
Method of reducing surface contamination in semiconductor wet-processing vessels |
March 8, 2005 |
| A method and apparatus for reducing the contaminants in a wet etching bath by rapidly removing a substantial portion of the etching liquid from the bath such that the contaminants are removed from the air/liquid interface of the bath surface is described. By rapidly removing a substantia |
| 6833084 |
Etching compositions |
December 21, 2004 |
| The present invention provides an etching composition which includes a polyhydric alcohol in combination with two inorganic acids. Preferably the etching composition of the present invention is a mixture of a glycol, nitric acid and hydrofluoric acid, with propylene glycol being preferre |
| 6831047 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
December 14, 2004 |
| A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in abou |
| 6794704 |
Method for enhancing electrode surface area in DRAM cell capacitors |
September 21, 2004 |
| Lower electrodes of capacitors composed of a texturizing underlayer and a conductive material overlayer are provided. The lower electrodes have an upper roughened surface. In one embodiment, the texturizing layer is composed of porous or relief nanostructures comprising a polymeric m |
| 6783695 |
Acid blend for removing etch residue |
August 31, 2004 |
| A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a surface passivation agent. The |
| 6762132 |
Compositions for dissolution of low-K dielectric films, and methods of use |
July 13, 2004 |
| An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su |
| 6743641 |
Method of improving surface planarity prior to MRAM bit material deposition |
June 1, 2004 |
| The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material la |
| 6703319 |
Compositions and methods for removing etch residue |
March 9, 2004 |
| A composition suitable for cleaning and methods of cleaning etch residue are provided. The composition includes at least one source of a fluoride ion and at least one organic solvent. |
| 6673675 |
Methods of fabricating an MRAM device using chemical mechanical polishing |
January 6, 2004 |
| The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. |
| 6656372 |
Methods of making magnetoresistive memory devices |
December 2, 2003 |
| The invention includes methods of forming magnetoresistive devices. In one method, a construction is formed which includes a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer. A first pattern is extended thro |
| 6656289 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
December 2, 2003 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 6645311 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
November 11, 2003 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 6641677 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
November 4, 2003 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. |
| 6639266 |
Modifying material removal selectivity in semiconductor structure development |
October 28, 2003 |
| Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr |
| 6607001 |
System of reducing water spotting and oxide growth on a semiconductor structure |
August 19, 2003 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 6601595 |
Method of reducing water spotting and oxide growth on a semiconductor structure |
August 5, 2003 |
| The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. |
| 6573554 |
Localized masking for semiconductor structure development |
June 3, 2003 |
| Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr |
