Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yates; Donald L.
Address:
Boise, ID
No. of patents:
62
Patents:


1 2










Patent Number Title Of Patent Date Issued
8565016 System having improved surface planarity for bit material deposition October 22, 2013
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a materia
8142673 Compositions for dissolution of low-k dielectric films, and methods of use March 27, 2012
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
7868369 Localized masking for semiconductor structure development January 11, 2011
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr
7759053 Methods of fabricating integrated circuitry July 20, 2010
The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conduct
7642157 Method for enhancing electrode surface area in DRAM cell capacitors January 5, 2010
Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a
7582570 Compositions for removal of processing byproducts and method for using same September 1, 2009
A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine co
7573121 Method for enhancing electrode surface area in DRAM cell capacitors August 11, 2009
Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a
7521373 Compositions for dissolution of low-k dielectric films, and methods of use April 21, 2009
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
7482176 Etch mask and method of forming a magnetic random access memory structure January 27, 2009
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer
7468534 Localized masking for semiconductor structure development December 23, 2008
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr
7432214 Compositions for dissolution of low-k dielectric film, and methods of use October 7, 2008
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
7422639 Method of reducing water spotting and oxide growth on a semiconductor structure September 9, 2008
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
7419768 Methods of fabricating integrated circuitry September 2, 2008
The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conduct
7402879 Layered magnetic structures having improved surface planarity for bit material deposition July 22, 2008
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a materia
7399424 Compositions for dissolution of low-k dielectric films, and methods of use July 15, 2008
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
7384727 Semiconductor processing patterning methods June 10, 2008
The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer over a different first composition resist layer. Overlapping portions of the first and secon
7375388 Device having improved surface planarity prior to MRAM bit material deposition May 20, 2008
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a materia
7312159 Compositions for dissolution of low-k dielectric films, and methods of use December 25, 2007
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
7307306 Etch mask and method of forming a magnetic random access memory structure December 11, 2007
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer
7285811 MRAM device for preventing electrical shorts during fabrication October 23, 2007
The present invention provides an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. A first dielectric laye
7261835 Acid blend for removing etch residue August 28, 2007
A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, which removes the rema
7204889 Method of reducing water spotting and oxide growth on a semiconductor structure April 17, 2007
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
7163019 Method of reducing water spotting and oxide growth on a semiconductor structure January 16, 2007
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. F
7148555 Method for enhancing electrode surface area in DRAM cell capacitors December 12, 2006
Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a
7135444 Cleaning composition useful in semiconductor integrated circuit fabrication November 14, 2006
A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in
7132299 Method of forming a magnetic random access memory structure November 7, 2006
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer
7119388 MRAM device fabricated using chemical mechanical polishing October 10, 2006
The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized.
7087561 Cleaning composition useful in semiconductor integrated circuit fabrication August 8, 2006
A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in
7067466 Cleaning composition useful in semiconductor integrated circuit fabrication June 27, 2006
A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in
7067465 Cleaning composition useful in semiconductor integrated circuit fabricating June 27, 2006
A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in
7018937 Compositions for removal of processing byproducts and method for using same March 28, 2006
A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine co
7015529 Localized masking for semiconductor structure development March 21, 2006
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr
6896740 Method of reducing water spotting and oxide growth on a semiconductor structure May 24, 2005
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. F
6867148 Removal of organic material in integrated circuit fabrication using ozonated organic acid soluti March 15, 2005
Organic acid components are used to increase the solubility of ozone in aqueous solutions for use in removing organic materials, such as polymeric resist and/or post-etch residues, from the surface of an integrated circuit device during fabrication. Each organic acid component is pre
6864186 Method of reducing surface contamination in semiconductor wet-processing vessels March 8, 2005
A method and apparatus for reducing the contaminants in a wet etching bath by rapidly removing a substantial portion of the etching liquid from the bath such that the contaminants are removed from the air/liquid interface of the bath surface is described. By rapidly removing a substantia
6833084 Etching compositions December 21, 2004
The present invention provides an etching composition which includes a polyhydric alcohol in combination with two inorganic acids. Preferably the etching composition of the present invention is a mixture of a glycol, nitric acid and hydrofluoric acid, with propylene glycol being preferre
6831047 Cleaning composition useful in semiconductor integrated circuit fabrication December 14, 2004
A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in abou
6794704 Method for enhancing electrode surface area in DRAM cell capacitors September 21, 2004
Lower electrodes of capacitors composed of a texturizing underlayer and a conductive material overlayer are provided. The lower electrodes have an upper roughened surface. In one embodiment, the texturizing layer is composed of porous or relief nanostructures comprising a polymeric m
6783695 Acid blend for removing etch residue August 31, 2004
A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a surface passivation agent. The
6762132 Compositions for dissolution of low-K dielectric films, and methods of use July 13, 2004
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the su
6743641 Method of improving surface planarity prior to MRAM bit material deposition June 1, 2004
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material la
6703319 Compositions and methods for removing etch residue March 9, 2004
A composition suitable for cleaning and methods of cleaning etch residue are provided. The composition includes at least one source of a fluoride ion and at least one organic solvent.
6673675 Methods of fabricating an MRAM device using chemical mechanical polishing January 6, 2004
The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized.
6656372 Methods of making magnetoresistive memory devices December 2, 2003
The invention includes methods of forming magnetoresistive devices. In one method, a construction is formed which includes a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer. A first pattern is extended thro
6656289 Method of reducing water spotting and oxide growth on a semiconductor structure December 2, 2003
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
6645311 Method of reducing water spotting and oxide growth on a semiconductor structure November 11, 2003
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
6641677 Method of reducing water spotting and oxide growth on a semiconductor structure November 4, 2003
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated.
6639266 Modifying material removal selectivity in semiconductor structure development October 28, 2003
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for pr
6607001 System of reducing water spotting and oxide growth on a semiconductor structure August 19, 2003
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
6601595 Method of reducing water spotting and oxide growth on a semiconductor structure August 5, 2003
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
1 2










 
 
  Recently Added Patents
Method and apparatus for establishing a media clip
Switching device and electronic apparatus using the same
Family of pain producing substances and methods to produce novel analgesic drugs
Device to facilitate moving an electrical cable of an electric vehicle charging station and method of providing the same
Control of protein activity using a conducting polymer
Method and computer system for automatic vectorization of a vessel tree
PVD coated tool
  Randomly Featured Patents
Method of fabricating semiconductor having a reduced leakage current flow between the accumulation electrode and the gate electrode
Two-way radio
Electrodes for microfluidic applications
Open-air parking shelter with photovoltaic elements and improved airflow characteristics
Method of manufacturing a composite golf club head
Two-piece doorway mat set
Halocarbon conversion
Flow diverter for turbomachinery seals
Combination detector
Sealed lash adjuster and method for adjusting amount of liquid sealed in sealed lash adjuster