| Patent Number |
Title Of Patent |
Date Issued |
| 7525399 |
Thin-film piezoelectric resonator, filter and voltage-controlled oscillator |
April 28, 2009 |
| A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a s |
| 7498904 |
Piezoelectric thin film resonator and devices provided with the same |
March 3, 2009 |
| A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge an |
| 7463117 |
Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturi |
December 9, 2008 |
| A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provi |
| 7420320 |
Piezoelectric thin film device and method for manufacturing the same |
September 2, 2008 |
| A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal. |
| 7323805 |
Piezoelectric thin film device and method for manufacturing the same |
January 29, 2008 |
| A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal. |
| 7268647 |
Film bulk acoustic-wave resonator and method for manufacturing the same |
September 11, 2007 |
| A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the |
| 7221920 |
Voltage controlled oscillator, frequency synthesizer and communication apparatus |
May 22, 2007 |
| A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a |
| 7187253 |
Film bulk acoustic-wave resonator and method for manufacturing the same |
March 6, 2007 |
| A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of |
| 6747529 |
Piezoelectric thin film resonator and frequency variable resonator using the resonator |
June 8, 2004 |
| A piezoelectric thin film resonator which comprises a first electrode, a second electrode, and a piezoelectric film which is interposed between the first electrode and the second electrode, and formed of an epitaxial ferroelectric thin film containing barium titanate, a spontaneous p |
| 6533906 |
Method of manufacturing an oxide epitaxially strained lattice film |
March 18, 2003 |
| A method of manufacturing an epitaxially-strained lattice film of an oxide, in which epitaxially-strained lattices having a good crystalline property are formed by applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to th |
| 6040068 |
Ceramic wiring board and method of producing the same |
March 21, 2000 |
| A ceramic wiring board has a non-oxide based ceramic substrate which is a sintered body containing aluminum nitride, silicon nitride or the like as main component, and a metallized layer formed on the non-oxide based ceramic substrate; the metallized layer is plasma-etched, irregularitie |
| 5907187 |
Electronic component and electronic component connecting structure |
May 25, 1999 |
| In such electronic components as semiconductor packages and semiconductor chips which are possessed of groups of connecting bumps as input and output terminals, the groups of connecting bumps comprise not less than two kinds of connecting bumps different in melting point or not less than |
| 5821627 |
Electronic circuit device |
October 13, 1998 |
| An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of |
| 5622769 |
Ceramic circuit board having a thermal conductivity substrate |
April 22, 1997 |
| According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance |
| 5412160 |
Circuit board |
May 2, 1995 |
| A circuit board comprising a substrate, at least one dielectric film formed on the substrate and made of at least one selected from the group consisting of AlN, BN, diamond, diamond-like carbon, BeO and SiC, the dielectric film having pores of a porosity of 5 to 95% by volume, and at |
| 5326623 |
Circuit board |
July 5, 1994 |
| A circuit board including a circuit pattern adhered firmly to a ceramic substrate and capable of eliminating an increase in resistivity due to an influence of an external environment, particularly, a thermal influence is disclosed. The circuit board comprises a ceramic substrate, and a c |
| 5070393 |
Aluminum nitride substrate for formation of thin-film conductor layer and semiconductor device u |
December 3, 1991 |
| An overcoat layer possessing an insulating property is formed only in the necessary part on a ceramic substrate formed of a sintered aluminum nitride. An aluminum nitride substrate for the formation of a thin-film conductor layer thereon is composed of the ceramic substrate and the o |
| 5041700 |
Circuit board including an aluminum nitride substrate and a multilayered metal oxynitride struct |
August 20, 1991 |
| A circuit board includes an aluminum nitride substrate, and a circuit pattern formed on the substrate and having a multilayered structure in which a metal oxynitride layer represented by formula Al.sub.u Ml.sub.v M2.sub.x O.sub.y N.sub.z (wherein M1 represents a metal selected from the |
| 4963701 |
Circuit board |
October 16, 1990 |
| Disclosed is an aluminum nitride thin film circuit board having an aluminum nitride substrate and a conductive thin film pattern formed on the substrate. The conductive thin film pattern has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au |
| 4919731 |
Brazing paste |
April 24, 1990 |
| The present invention provides an electronic component part with terminal pins very closely and very strongly bonded to a high thermal conductivity ceramics circuit board and a method for simply and continuously manufacturing electronic component parts, with a high operability, each |
| 4882652 |
High dielectric constant type ceramic composition |
November 21, 1989 |
| When a portion of the Pb of a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -based ceramic composition within the region bounded by lines connecting a, b, c, d, e and f points in the ternary composition diagram of the accompanying FIG. 1 is substituted by a small amount of Ca, a high dielectric const |
| 4835344 |
Electronic component parts and method for manufacturing the same |
May 30, 1989 |
| The present invention provides an electronic component part with terminal pins very closely and very strongly bonded to a high thermal conductivity ceramics circuit board and a method for simply and continuously manufacturing electronic component parts, with a high operability, each |
| 4772985 |
Thick film capacitor |
September 20, 1988 |
| Disclosed is a thick film capacitor comprising (a) a sintered layer of a ferroelectric material mainly consisting of one or more ferroelectric inorganic compounds having a perovskite structure and an inorganic binder having a eutectic composition which experiences a liquid phase at a |
