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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yang; Jianping
Address:
Shanghai, CN
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
8247258 Method of interconnect for image sensor August 21, 2012
A method for fabricating CMOS image sensor device includes providing a P-type semiconductor substrate. The semiconductor substrate includes a surface region. The method includes forming a first dielectric layer having a first thickness overlying a first region of the semiconductor su
8143743 Uninterruptible power supply apparatus March 27, 2012
A method of controlling an uninterruptible power supply apparatus (UPS) is provided. The UPS apparatus includes at least an AC input voltage, a DC input voltage and a single-phase AC/AC converter. The single-phase AC/AC converter includes an AC inductor, a bus capacitor, a boost arm, a
8133751 ONO spacer etch process to reduce dark current March 13, 2012
A method of forming a CMOS image sensor device. The method includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method includes forming a gate oxide layer overlying the surface region and form
8048705 Method and structure for a CMOS image sensor using a triple gate process November 1, 2011
A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness
7989252 Method for fabricating pixel cell of CMOS image sensor August 2, 2011
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielect
7932127 Method of making CMOS image sensor-hybrid silicide April 26, 2011
Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se
7852027 Method and circuit for testing motor December 14, 2010
A method for testing a motor having a rotor and a winding is provided. The method includes steps of (a) providing a power to rotate the rotor to a predetermined speed, (b) removing the power, (c) measuring a terminal voltage of the winding while a current within the winding is zero, (d)
7700399 Method of making CMOS image sensor--hybrid silicide April 20, 2010
Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se
7582522 Method and device for CMOS image sensing with separate source formation September 1, 2009
A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the
7335546 Method and device for CMOS image sensing with separate source formation February 26, 2008
A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the










 
 
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