| Patent Number |
Title Of Patent |
Date Issued |
| 8247258 |
Method of interconnect for image sensor |
August 21, 2012 |
| A method for fabricating CMOS image sensor device includes providing a P-type semiconductor substrate. The semiconductor substrate includes a surface region. The method includes forming a first dielectric layer having a first thickness overlying a first region of the semiconductor su |
| 8143743 |
Uninterruptible power supply apparatus |
March 27, 2012 |
| A method of controlling an uninterruptible power supply apparatus (UPS) is provided. The UPS apparatus includes at least an AC input voltage, a DC input voltage and a single-phase AC/AC converter. The single-phase AC/AC converter includes an AC inductor, a bus capacitor, a boost arm, a |
| 8133751 |
ONO spacer etch process to reduce dark current |
March 13, 2012 |
| A method of forming a CMOS image sensor device. The method includes providing a semiconductor substrate having a P-type impurity characteristic. The semiconductor substrate includes a surface region. The method includes forming a gate oxide layer overlying the surface region and form |
| 8048705 |
Method and structure for a CMOS image sensor using a triple gate process |
November 1, 2011 |
| A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness |
| 7989252 |
Method for fabricating pixel cell of CMOS image sensor |
August 2, 2011 |
| The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielect |
| 7932127 |
Method of making CMOS image sensor-hybrid silicide |
April 26, 2011 |
| Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se |
| 7852027 |
Method and circuit for testing motor |
December 14, 2010 |
| A method for testing a motor having a rotor and a winding is provided. The method includes steps of (a) providing a power to rotate the rotor to a predetermined speed, (b) removing the power, (c) measuring a terminal voltage of the winding while a current within the winding is zero, (d) |
| 7700399 |
Method of making CMOS image sensor--hybrid silicide |
April 20, 2010 |
| Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se |
| 7582522 |
Method and device for CMOS image sensing with separate source formation |
September 1, 2009 |
| A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the |
| 7335546 |
Method and device for CMOS image sensing with separate source formation |
February 26, 2008 |
| A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region is associated with the |
