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Inventor: Yang; Jean Yee-Mei
Address: Glendale, CA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7553727 |
Using implanted poly-1 to improve charging protection in dual-poly process |
June 30, 2009 |
| The present invention pertains to implementing a dual poly process in forming a transistor based memory device. The process allows a first polysilicon layer to be selectively doped subsequent to deposition of the second polysilicon layer. The doping increases the conductivity of the |
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