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Inventor: Yang; Chin-Sheng
Address: Hsinchu, TW
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7554148 |
Pick-up structure for DRAM capacitors |
June 30, 2009 |
| A pick-up structure for DRAM capacitors and a DRAM process are described. A substrate with trenches therein is provided, wherein the trenches include a first trench and the sidewall of each of the trenches is formed with a dielectric layer thereon. A conductive layer is formed on the |
| 7547594 |
Metal-oxide-semiconductor transistor and method of forming the same |
June 16, 2009 |
| A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor substrate. The gate structure includes a first strip portion and a second strip portion that |
| 5760412 |
Method and apparatus for sensing the presence of a line of data from a document on a transparent |
June 2, 1998 |
| Apparatus and a method for sensing the presence of a document on the transparent surface of an optical scanner involve moving a scanner optics carriage to a predetermined position beneath the transparent surface, reading a line of data, and if any of the data is on the "white" side of |
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