| Patent Number |
Title Of Patent |
Date Issued |
| 7554210 |
Semiconductor device with semiconductor chip mounted in package |
June 30, 2009 |
| A semiconductor device including a semiconductor chip having first and second principal surfaces is disclosed. The semiconductor chip includes a first electrode formed on the first principal surface and a second electrode formed on the second principal surface. A first lead frame inc |
| 5874750 |
Pressure-contact type semiconductor device |
February 23, 1999 |
| A pressure-contact type semiconductor device such as an insulated gate bipolar transistor. The device includes semiconductor chip, a gate electrode on a first surface of the semiconductor chip, an emitter electrode insulated and separated from the gate electrode, and an emitter sensi |
| 5835985 |
Reverse conducting gate-turnoff thyristor |
November 10, 1998 |
| A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by controlling impurity diffusion and |
| 5539232 |
MOS composite type semiconductor device |
July 23, 1996 |
| A plurality of segments of small-sized IGBT devices are arranged concentrically in a plurality of rows in a pellet substrate. Each segment has an independent polysilicon gate electrode layer. A gate electrode terminal lead-out portion is provided at a central portion of the pellet su |
