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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yanagihara; Manabu
Address:
Osaka, JP
No. of patents:
26
Patents:












Patent Number Title Of Patent Date Issued
8569843 Semiconductor device October 29, 2013
A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first
8264002 Field-effect transistor September 11, 2012
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided
8203376 Semiconductor device and method for driving the same June 19, 2012
A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the
8164115 Nitride semiconductor device April 24, 2012
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a
8076698 Transistor and method for operating the same December 13, 2011
In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with
7898002 Nitride semiconductor device and method for fabricating the same March 1, 2011
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a
7825434 Nitride semiconductor device November 2, 2010
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first
7821030 Semiconductor device and method for manufacturing the same October 26, 2010
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first
7816707 Field-effect transistor with nitride semiconductor and method for fabricating the same October 19, 2010
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided
7759700 Semiconductor device July 20, 2010
A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a
7612426 Schottky barrier diode and diode array November 3, 2009
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohm
7605441 Semiconductor device October 20, 2009
A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically
7595680 Bidirectional switch and method for driving the same September 29, 2009
A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control
7576373 Nitride semiconductor device and method for manufacturing the same August 18, 2009
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate electrode establishes ohmic contact with the high concentration p-GaN layer. A source
7550821 Nitride semiconductor device June 23, 2009
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of
7375407 Schottky barrier diode and integrated circuit using the same May 20, 2008
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first se
7368793 HEMT transistor semiconductor device May 6, 2008
The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second electrode formed spaced apart from each other on the device formation region. A semi-insulati
7291872 Semiconductor device and method for fabricating the same November 6, 2007
In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain elect
7148557 Bipolar transistor and method for fabricating the same December 12, 2006
A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitive film is provided
6797996 Compound semiconductor device and method for fabricating the same September 28, 2004
A compound semiconductor device includes an emitter layer, a base layer which is in contact with the emitter layer and formed of a first compound semiconductor, a collector layer which is in contact with the base layer and formed of a second compound semiconductor having a wider bandgap
6677625 Bipolar transistor January 13, 2004
The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on the collector layer; and a semiconductor layer deposited on the base layer in the shape of a
6407617 Bias circuit and method of fabricating semiconductor device June 18, 2002
The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least o
6376898 Bipolar transistor layout with minimized area and improved heat dissipation April 23, 2002
An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit transistors, each including a base
6153499 Method of manufacturing semiconductor device November 28, 2000
A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed w
6051454 Semiconductor device and method for fabricating the same April 18, 2000
A lower resist film, which is made of PMMA for EB exposure and has a thickness of about 200 nm, is applied onto a substrate, and then an upper resist film to be exposed to i-rays is applied on the lower resist film. Thereafter, a mixed layer, in which the upper and lower resist films are
5166081 Method of producing a bipolar transistor November 24, 1992
A dummy emitter is formed in the portion corresponding to an emitter region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter region is formed,










 
 
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