Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yamazaki; Yuichiro
Address:
Tokyo, JP
No. of patents:
45
Patents:












Patent Number Title Of Patent Date Issued
8124933 Mapping-projection-type electron beam apparatus for inspecting sample by using electrons emitted February 28, 2012
An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for o
8067732 Electron beam apparatus November 29, 2011
An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter (5-1), an electromagnetic deflector (11-1), a beam separator (12-1), and a tablet lens (17-1) as an objective lens. The beam separator (12-1) is configured suc
8053726 Inspection system by charged particle beam and method of manufacturing devices using the system November 8, 2011
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the elec
8036445 Pattern matching method, program and semiconductor device manufacturing method October 11, 2011
A pattern matching method includes: detecting an edge of a pattern in a pattern image obtained by imaging the pattern; segmenting the detected pattern edge to generate a first segment set consisting of first segments; segmenting a pattern edge on reference data which serves as a refe
8035082 Projection electron beam apparatus and defect inspection system using the apparatus October 11, 2011
A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun 1 are irradiated onto a sample 7 through a primary electro-optical system, and electrons consequently
7863580 Electron beam apparatus and an aberration correction optical apparatus January 4, 2011
An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 .mu.m with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample
7847250 Substrate inspection apparatus, substrate inspection method and method of manufacturing semicond December 7, 2010
A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected
7674570 Mask pattern inspection method, exposure condition verification method, and manufacturing method March 9, 2010
A mask pattern inspection method includes: transferring a mask pattern onto a conductor substrate or a semiconductor substrate; preparing a sample including a substrate surface pattern in an electrically conductive state to the substrate, the substrate surface pattern being constitut
7645988 Substrate inspection method, method of manufacturing semiconductor device, and substrate inspect January 12, 2010
A substrate inspection method includes: generating an electron beam and irradiating the electron beam as a primary electron beam to a substrate as a specimen; inducing at least any of a secondary electron, a reflected electron and a backscattering electron which are emitted from the
7608821 Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturi October 27, 2009
A substrate inspection apparatus includes: an electron gun which generates an electron beam to irradiate the electron beam to a substrate; an electron detection unit which detects at least one of a secondary electron, a reflection electron and a back scattering electron generated fro
7592586 Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflect September 22, 2009
An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for o
7569838 Electron beam inspection system and inspection method and method of manufacturing devices using August 4, 2009
An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary ele
7504625 Substrate inspection method, manufacturing method of semiconductor device and substrate inspecti March 17, 2009
A substrate inspection method includes: generating primary charged particle beams; applying the generated primary charged particle beams to an inspection target of a substrate; condensing first secondary charged particle beams including at least one of secondary charged particles, re
7483155 Structure inspection method, pattern formation method, process condition determination method an January 27, 2009
Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the eva
7462829 Substrate inspection apparatus, substrate inspection method and method of manufacturing semicond December 9, 2008
A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected
7449691 Detecting apparatus and device manufacturing method November 11, 2008
A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wh
7426041 Structure inspection method, pattern formation method, process condition determination method an September 16, 2008
Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the eva
7411191 Inspection system by charged particle beam and method of manufacturing devices using the system August 12, 2008
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the elec
7352195 Electron beam apparatus with detailed observation function and sample inspecting and observing m April 1, 2008
Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface a
7351969 Electron beam inspection system and inspection method and method of manufacturing devices using April 1, 2008
An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary ele
7241993 Inspection system by charged particle beam and method of manufacturing devices using the system July 10, 2007
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the elec
7212017 Electron beam apparatus with detailed observation function and sample inspecting and observing m May 1, 2007
Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface a
7211796 Substrate inspection apparatus, substrate inspection method and method of manufacturing semicond May 1, 2007
A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected
7148479 Defect inspection apparatus, program, and manufacturing method of semiconductor device December 12, 2006
A defect inspection apparatus includes a charged particle beam source which emits a charged particle beam to illuminate the charged particle beam onto a sample as a primary beam; an image pickup which includes an imaging element having a light receiving face receiving at least one of a
7098457 Electron beam apparatus and device manufacturing method using same August 29, 2006
A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for foc
7081756 Substrate inspection apparatus, substrate inspection method, method of manufacturing semiconduct July 25, 2006
A substrate inspection apparatus includes a first waveform measurer which acquires a first amplitude waveform that is the amplitude waveform of an AC voltage obtained from a semiconductor of a semiconductor substrate which is being inspected when an external AC power source is connected
7075072 Detecting apparatus and device manufacturing method July 11, 2006
A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wh
6992290 Electron beam inspection system and inspection method and method of manufacturing devices using January 31, 2006
An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary ele
6991878 Photomask repair method and apparatus January 31, 2006
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to
6940080 Charged particle beam lithography system, lithography method using charged particle beam, method September 6, 2005
A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a
6909092 Electron beam apparatus and device manufacturing method using same June 21, 2005
A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusin
6512237 Charged beam exposure method and charged beam exposure apparatus January 28, 2003
A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam,
6495841 Charged beam drawing apparatus December 17, 2002
In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mech
6376136 Charged beam exposure method April 23, 2002
A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam,
6265719 Inspection method and apparatus using electron beam July 24, 2001
An inspection apparatus using an electron beam according to this invention has an electron beam irradiation unit (1-10) for irradiating a sample (11) with an electron beam (31), a projection optical unit (16-21) for forming a one- and/or two-dimensional image or images of secondary and r
6171760 Lithographic method utilizing charged particle beam exposure and fluorescent film January 9, 2001
A lithography method is applied to a lithography system comprising a charged particle beam generation section for generating a charged particle beam, a mask stage for holding a transfer mask to which the charged particle beam is applied, and a wafer stage for holding a wafer to be pr
5639699 Focused ion beam deposition using TMCTS June 17, 1997
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate aroun
5548183 Magnetic field immersion type electron gun August 20, 1996
In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical
5539211 Charged beam apparatus having cleaning function and method of cleaning charged beam apparatus July 23, 1996
A charged beam apparatus comprises a source tank provided outside the column and containing a plasma source, a plasma generating apparatus for generating plasma from a plasma source supplied from the source tank, gate valves and an exhausting pump for introducing plasma generated by the
5444256 Electrostatic lens and method for producing the same August 22, 1995
An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape. A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion
5429730 Method of repairing defect of structure July 4, 1995
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate aroun
5413663 Plasma processing apparatus May 9, 1995
A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A sem
5406178 Pulse beam forming method and apparatus April 11, 1995
In a pulse beam forming apparatus, there are disposed in order a beam generating device for generating a charged particle beam having a circular cross section, a beam elongating device for elongating the charged particle beam in cross section, a deflecting device for deflecting the c
5293045 Electrostatic lens March 8, 1994
An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron
5138169 Method and apparatus for irradiating low-energy electrons August 11, 1992
There is disclosed a method of irradiating low-energy electrons that has the steps of irradiating a primary electron beam from a primary electron beam irradiation portion onto a secondary electron emission portion to emit a secondary electron beam, accelerating the emitted secondary










 
 
  Recently Added Patents
Distortion compensation device, distortion compensation method, and radio transmitter
Headset electronics
Rose plant named `ESM R044`
Cross-linkable compositions
Systems and methods to provide communication history for communication devices
Scanning of a touch screen
System and method for video encoding
  Randomly Featured Patents
Prevention of electrical discharges in polymeric heat exchangers
Downhole fluid analysis for production logging
Devices, systems, and methods for cleaning, disinfecting, rinsing, and priming blood separation devices and associated fluid lines
Device, system, and method of bit line selection of a flash memory
Method for charging non-aqueous electrolyte secondary battery
Bottle
Variable light beam scanning apparatus
Electrically grounded water heater
Static dissipative filtration media
Method for containment of a laboratory chemical