| Patent Number |
Title Of Patent |
Date Issued |
| RE38727 |
Photoelectric conversion device and method of making the same |
April 19, 2005 |
| A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such |
| RE38266 |
Method for fabricating semiconductor thin film |
October 7, 2003 |
| An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorpho |
| RE37441 |
Photoelectric conversion device |
November 13, 2001 |
| A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such |
| RE36314 |
Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film o |
September 28, 1999 |
| An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain re |
| RE34658 |
Semiconductor device of non-single crystal-structure |
July 12, 1994 |
| A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region form |
| RE33208 |
Photoelectric conversion panel and assembly thereof |
May 1, 1990 |
| A photoelectric conversion panel which includes a PIN type non-single-crystal semiconductor laminated photoelectric conversion member formed on a substrate, the substrate is formed by a thin, flexible, chemically reinforced glass sheet.A plurality of such photoelectric conversion panels |
| H1683 |
Superconducting material |
October 7, 1997 |
| A superconducting composition is provided to essentially consist of a superconducting material and Li(lithium), Na(sodium), and K(potassium) mixed in an amount up to 0.2% by weight of of the composition into the superconducting material. |
| 7619282 |
Hybrid circuit and electronic device using same |
November 17, 2009 |
| There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are |
| 7616282 |
Liquid crystal display and method of driving same |
November 10, 2009 |
| There is disclosed a lightweight and small liquid crystal display which achieves low power consumption and in which the optical anisotropy of the liquid crystal material is compensated for in order to enhance the viewing angle characteristics and the response speed of the liquid crys |
| 7612376 |
Semiconductor device |
November 3, 2009 |
| A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and |
| 7611930 |
Method of manufacturing display device |
November 3, 2009 |
| In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the st |
| 7609358 |
Liquid crystal display device and manufacturing method thereof |
October 27, 2009 |
| As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pa |
| 7605902 |
Semiconductor device and method of fabricating the same |
October 20, 2009 |
| There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of f |
| 7605786 |
Liquid crystal display device |
October 20, 2009 |
| A small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales is provided. Gray scale display is performed by combining time ratio gray scale and voltage gray scale in a liquid crystal displa |
| 7605534 |
Light-emitting element having metal oxide and light-emitting device using the same |
October 20, 2009 |
| It is an object of the invention is to provide a light-emitting element in which failure of the light-emitting element due to separation can be controlled and stable luminescence can be obtained with high-efficiency and for a long stretch of time by controlling separation of layers c |
| 7605401 |
Semiconductor device and fabrication method thereof |
October 20, 2009 |
| A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400.degree. C |
| 7605023 |
Manufacturing method for a semiconductor device and heat treatment method therefor |
October 20, 2009 |
| To apply a technique of forming a dense insulating film with a high quality in a thin film element such as a TFT formed on a glass substrate by eliminating an influence of contraction of the substrate caused by heat treatment in a manufacturing process for the element, and a semicond |
| 7601572 |
Semiconductor device and manufacturing method thereof |
October 13, 2009 |
| In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) |
| 7598927 |
Light-emitting device, driving support system, and helmet |
October 6, 2009 |
| It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within |
| 7596024 |
Nonvolatile memory |
September 29, 2009 |
| A highly-integrated nonvolatile memory. A memory cell array where plural memory cells are arranged in matrix in row and column directions, plural first and second word lines, and plural bit lines are included. Each of the plural memory cells includes a first memory transistor and a secon |
| 7592991 |
Light emitting device and drive method thereof |
September 22, 2009 |
| The reliability of an EL element is enhanced while the increase of the electric power consumption is suppressed. It becomes possible that in a SES drive, the reverse bias is applied to the EL element driven at a constant electric current. Moreover, the application of the reverse bias |
| 7592984 |
Display device and electronic device |
September 22, 2009 |
| A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The |
| 7592980 |
Semiconductor device |
September 22, 2009 |
| Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the gro |
| 7592975 |
Display device and driving method thereof |
September 22, 2009 |
| A display device where a reverse driving voltage can be applied to a light-emitting element at regular intervals in order to insulate a short-circuit portion, thereby prolonging the life of the light-emitting element. A short-circuit portion is burnt out by providing a period for sup |
| 7589032 |
Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor dev |
September 15, 2009 |
| Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the |
| 7588970 |
Semiconductor device and manufacturing method thereof |
September 15, 2009 |
| The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern o |
| 7586505 |
Light emitting device and electronic apparatus using the same |
September 8, 2009 |
| Providing a light emitting device capable of suppressing the variations of luminance of OLEDs associated with the deterioration of an organic light emitting material, and achieving a consistent luminance. An input video signal is constantly or periodically sampled to sense a light emissi |
| 7585783 |
Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor |
September 8, 2009 |
| In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate. In addition, it provides a drop discharge apparatus which is capable of improving d |
| 7585714 |
Method for manufacturing semiconductor device, semiconductor device, and laser irradiation appar |
September 8, 2009 |
| It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is |
| 7583020 |
Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning met |
September 1, 2009 |
| This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film for |
| 7579774 |
Light emitting device and method for fabricating light emitting device |
August 25, 2009 |
| It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number |
| 7579771 |
Light emitting device and method of manufacturing the same |
August 25, 2009 |
| All lights generated in an organic compound layer are not taken out towards a TFT from a cathode as a transparent electrode. For instance, the light is emitted in a lateral direction (direction parallel to the substrate surface) but the light emitted in the lateral direction is not t |
| 7579220 |
Semiconductor device manufacturing method |
August 25, 2009 |
| It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and int |
| 7579203 |
Light emitting device |
August 25, 2009 |
| An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to compl |
| 7579089 |
Luminescent device |
August 25, 2009 |
| Interfaces between layers in a light emitting element are eliminated by using a light emitting element with a mixed region comprising a hole transporting material and an electron transporting material. The light emitting element may further comprise a region with a dopant. By using t |
| 7575993 |
Method of manufacturing semiconductor device and display device |
August 18, 2009 |
| To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring accor |
| 7575985 |
Method of fabricating semiconductor device |
August 18, 2009 |
| In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization of a semiconductor film and gettering treatment of a catalytic element used for the cry |
| 7575965 |
Method for forming large area display wiring by droplet discharge, and method for manufacturing |
August 18, 2009 |
| It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate.In the |
| 7575961 |
Electrooptical device and a method of manufacturing the same |
August 18, 2009 |
| To provide a semiconductor device of high reliability by arranging TFTs that have appropriate structures in accordance with circuit functions. In a semiconductor device having a driver circuit portion and a pixel portion on the same insulator, gate insulating films of a driver TFT are |
| 7573469 |
Display device |
August 11, 2009 |
| In a display device having driving circuits formed on the same substrate where pixels are formed, the lateral frame area of the display device is reduced. A gate signal line driving circuit is placed in parallel with a source signal line driving circuit, so that no driving circuits are |
| 7572522 |
Luminescent device |
August 11, 2009 |
| Interfaces between layers in a light emitting element are eliminated by using a light emitting element with a mixed region including a hole transporting material and an electron transporting material The light emitting element may further comprise a region with a dopant. By using thi |
| 7569854 |
Semiconductor device and fabrication method thereof |
August 4, 2009 |
| A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of |
| 7569440 |
Method of manufacturing a semiconductor device and manufacturing system thereof |
August 4, 2009 |
| A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amo |
| 7569408 |
Semiconductor device and method for forming the same |
August 4, 2009 |
| An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated |
| 7569405 |
Method of manufacturing light emitting device |
August 4, 2009 |
| A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode und |
| 7567328 |
Liquid-crystal display device and method of fabricating the same |
July 28, 2009 |
| An active matrix type liquid-crystal display device of IPS mode has its aperture ratio enhanced, thereby to realize an image display which has a wide angle of vision and which is clear and bright. A pixel portion (in FIG. 2) in the liquid-crystal display device comprises a TFT (115) whic |
| 7567031 |
Organic light emitting element and light emitting device using the element |
July 28, 2009 |
| An organic light emitting element which can employ non-sublimable (non-volatile) or insoluble materials while keeping the same level of light emission as prior art is provided. Dispersive particles (202a) of an insoluble organic material that is dispersed in a solvent (201) in which |
| 7566903 |
Semiconductor device and method of manufacturing the same |
July 28, 2009 |
| The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (1 |
| 7564139 |
Semiconductor device and method for manufacturing the same |
July 21, 2009 |
| It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting th |
| 7564059 |
Semiconductor device with tapered gates |
July 21, 2009 |
| In order to realize a higher reliability TFT and a high reliability semiconductor device, an NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impuri |
