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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yamazaki; Shunpei
Address:
Tokyo, JP
No. of patents:
2359
Patents:












Patent Number Title Of Patent Date Issued
RE43471 Method of manufacturing a semiconductor device June 12, 2012
In a patterning process of a semiconductor device having inverted stagger type TFTs, a normal photolithography step using diazo naphthoquinone (DNQ)-Novolac resin based positive photo resist is applied, and a problem of the area dependency of the photo resist pattern side wall taper angl
RE43450 Method for fabricating semiconductor thin film June 5, 2012
An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amo
RE42241 Method of fabricating a semiconductor device March 22, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE42139 Method of fabricating a semiconductor device February 15, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE42097 Method of fabricating a semiconductor device February 1, 2011
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
RE38727 Photoelectric conversion device and method of making the same April 19, 2005
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such
RE38266 Method for fabricating semiconductor thin film October 7, 2003
An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorpho
RE37441 Photoelectric conversion device November 13, 2001
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such
RE36314 Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film o September 28, 1999
An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain re
RE34658 Semiconductor device of non-single crystal-structure July 12, 1994
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region form
RE33208 Photoelectric conversion panel and assembly thereof May 1, 1990
A photoelectric conversion panel which includes a PIN type non-single-crystal semiconductor laminated photoelectric conversion member formed on a substrate, the substrate is formed by a thin, flexible, chemically reinforced glass sheet.A plurality of such photoelectric conversion panels
H1683 Superconducting material October 7, 1997
A superconducting composition is provided to essentially consist of a superconducting material and Li(lithium), Na(sodium), and K(potassium) mixed in an amount up to 0.2% by weight of of the composition into the superconducting material.
8587999 Semiconductor device November 19, 2013
An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line,
8587742 Display device, electronic device and method of driving display device November 19, 2013
The present invention provides a display device which can display characters clearly and display images smoothly. An area gray scale method is adopted and a configuration of one pixel is changed depending on a mode, by selecting one or more display regions in each pixel. When charact
8586974 Light-emitting device and lighting device November 19, 2013
A light-emitting device including a reflection member, a sealing member having a light-transmitting property, and a light-emitting element between the reflection member and the sealing member is provided. In the light-emitting device, the light-emitting element includes a first trans
8582349 Semiconductor device November 12, 2013
An object is to provide a semiconductor device which includes a memory cell capable of holding accurate data even when the data is multilevel data. The semiconductor device includes a memory cell holding data in a node to which one of a source and a drain of a transistor whose channel
8581818 Liquid crystal display device and method for driving the same November 12, 2013
To increase the frequency of input of image signals, a pixel portion of a liquid crystal display device is divided into a plurality of regions, and input of image signals is controlled in each of the plurality of regions. As a result, a plurality of scan lines can be selected at the same
8581260 Semiconductor device including a memory November 12, 2013
Plural kinds of thin film transistors having different film thicknesses of semiconductor layers are provided over a substrate having an insulating surface. A channel formation region of semiconductor layer in a thin film transistor for which high speed operation is required is made t
8581234 Deposition method and manufacturing method of light-emitting device November 12, 2013
Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first subst
8576620 Semiconductor device and driving method thereof November 5, 2013
A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address s
8576147 Display device and electronic device November 5, 2013
A display device suppresses the influence of variations of a current value supplied to a light emitting element caused by a temperature change. In particular, luminance variations caused by a temperature gradient in a pixel portion due to a heat generated from a source signal line dr
8574976 Semiconductor device and manufacturing method thereof November 5, 2013
A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold vo
8574768 Power storage device November 5, 2013
An embodiment of the present invention relates to a power storage device which includes a positive electrode having a positive-electrode current collector with a plurality of first projections, a first insulator provided over each of the plurality of first projections, and a positive
8570263 Electronic equipment including LED backlight October 29, 2013
An object of the present invention is to provide a display device which enables multi-gray scale display without complicating the structure of D/A converter circuit. The measure taken to achieve the object is to use n bit of information among m bit digital video data inputted from ex
8569958 Light emitting device and production system of the same October 29, 2013
To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and da
8569754 Semiconductor device and manufacturing method thereof October 29, 2013
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffe
8569119 Method for producing semiconductor device and display device October 29, 2013
A step of forming wiring using first solution ejection means for ejecting a conductive material, a step of forming a resist mask on the wiring using second solution ejection means, and a step of etching the wiring using an atmospheric-pressure plasma device having linear plasma gener
8569098 Method for manufacturing photoelectric conversion device October 29, 2013
A method for manufacturing a photoelectric conversion device including a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, and a second-conductivity-type semiconductor region that are stacked over an electrode is provided for a n
8564575 Electrooptical device and method of fabricating the same October 22, 2013
There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are for
8563979 Method for producing display device October 22, 2013
In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface o
8563333 Film formation apparatus and film formation method October 22, 2013
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur
8300201 Semiconductor device and a method of manufacturing the same October 30, 2012
A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs ha
8300168 Display device comprising an antioxidant film formed on a microcrystalline semiconductor film wh October 30, 2012
It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insul
8294154 Semiconductor display device October 23, 2012
A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display r
8293552 Light-emitting device, liquid-crystal display device and method for manufacturing same October 23, 2012
The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, S
8289753 Semiconductor device October 16, 2012
An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second ga
8284375 Liquid crystal display device and manufacturing method thereof October 9, 2012
As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pa
8284142 Display device October 9, 2012
A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT
8284138 Light-emitting device and electric appliance October 9, 2012
An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel porti
8283679 Semiconductor device having light-emitting element and light-receiving element for transmitting October 9, 2012
The present invention provides a semiconductor device having an integrated circuit formed by a low cost glass substrate, which can respond to the increase of an amount of information, and which offers high performance at high speed. A semiconductor device comprises a plurality of gla
8283216 Liquid crystal display device and method for manufacturing the same October 9, 2012
As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and
8278195 Plasma CVD apparatus October 2, 2012
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased whil
8278160 Semiconductor device and method of manufacturing the same October 2, 2012
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low
8278135 Highly pure film formation method for light emitting device using gas from evaporated electrolum October 2, 2012
There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur
8277902 Method for forming film and method for manufacturing light emitting device October 2, 2012
A method for forming a film in which throughput is improved and a desired pattern is obtained smoothly in stacking a plurality of material layers over a substrate and a method for manufacturing a light emitting device are provided. In advance, a material layer is formed selectively by a
8274456 Display device and driving method of the same, and electronic apparatus September 25, 2012
The brightness of a light emitting element varies when changes in ambient temperature or changes with time occur. In view of this, the invention provides a display device where the influence of variations in the current value of the light emitting element due to changes in ambient te
8274083 Semiconductor device and a method of manufacturing the same September 25, 2012
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
8272575 Semiconductor device September 25, 2012
A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate ha
8269227 Light emitting device and electronic device September 18, 2012
The invention provides a light emitting device which uses a color conversion layer, with high light emission efficiency and a low driving voltage. The light emitting device includes a light emitting element having a pair of electrodes and a layer containing an organic compound sandwi
8269218 Display device September 18, 2012
One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor










 
 
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