Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yamazaki; Shunpei
Address:
Setagaya, JP
No. of patents:
475
Patents:


1 2 3 4 5 6 7 8 9 10










Patent Number Title Of Patent Date Issued
RE39393 Device for reading an image having a common semiconductor layer November 14, 2006
A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate wherein said photoe
8586988 Semiconductor device and manufacturing method thereof November 19, 2013
[Summary] [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 1
8586197 Composite material, light emitting element, light emitting device and electronic appliance using November 19, 2013
A composite material includes an organic compound represented by the following general formula (1) and an inorganic compound, where, in the general formula (1), R.sup.1 to R.sup.24 is identical to or different from one another, and represent any of hydrogen, an alkyl group, an alkoxy
8581332 Semiconductor device and manufacturing method thereof November 12, 2013
The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structura
8581309 Semiconductor device November 12, 2013
An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor devi
8576348 Reflective liquid crystal display panel and device using same November 5, 2013
There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence
8575741 Method of manufacturing a semiconductor device November 5, 2013
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8575631 Lighting device November 5, 2013
For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large th
8575619 Semiconductor device and fabrication method thereof November 5, 2013
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achi
8570256 Device substrate, light emitting device and driving method of light emitting device October 29, 2013
A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the
8563976 Semiconductor device and manufacturing method thereof October 22, 2013
A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide
8297518 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, docu October 30, 2012
Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, priv
8294155 Thin film transistor, display device having thin film transistor, and method for manufacturing t October 23, 2012
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate e
8294147 Semiconductor device and manufacturing method the same October 23, 2012
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a chann
8293661 Semiconductor device and manufacturing method thereof October 23, 2012
One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a su
8293595 Semiconductor device and method for manufacturing the same October 23, 2012
In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted
8293594 Method for manufacturing a display device having oxide semiconductor layer October 23, 2012
An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for
8289164 Semiconductor device and manufacturing method thereof October 16, 2012
A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag
8288248 Method of manufacturing semiconductor device having island-like single crystal semiconductor lay October 16, 2012
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the
8288197 Method for manufacturing a semiconductor device including a memory device comprising an insulato October 16, 2012
It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality
8283862 Light emitting device and method for manufacturing the same October 9, 2012
An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an
8274079 Semiconductor device comprising oxide semiconductor and method for manufacturing the same September 25, 2012
A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate
8268701 Manufacturing of semiconductor device September 18, 2012
Instead of forming a semiconductor film by bonding a bond substrate (semiconductor substrate) to a base substrate (supporting substrate) and then separating or cleaving the bond substrate, a bond substrate is separated or cleaved at a plurality of positions to form a plurality of fir
8263421 Manufacturing method of semiconductor device September 11, 2012
An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an in
8258515 Contact structure and semiconductor device September 4, 2012
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic
8252637 Semiconductor device and method of fabricating the same August 28, 2012
The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate elect
8247813 Display device and electronic device including the same August 21, 2012
One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide compon
8247307 Manufacturing method of substrate provided with semiconductor films August 21, 2012
A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single
8247246 Semiconductor device and manufacturing method thereof, delamination method, and transferring met August 21, 2012
A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a
8242988 Device substrate, light emitting device and driving method of light emitting device August 14, 2012
A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the
8242971 Display device and method of driving the same August 14, 2012
In a multi-window display device, the following has been merely performed: before data for plural screens is inputted to a display, video signals themselves are subjected to signal processing, and the processed video signals are inputted to the display, whereby display is performed.
8242496 Semiconductor device and method for manufacturing the same August 14, 2012
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for
8238152 Memory device and manufacturing method the same August 7, 2012
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above
8237248 Semiconductor device August 7, 2012
An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or
8237167 Semiconductor device and manufacturing method thereof August 7, 2012
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of
8237164 Semiconductor device including magnet August 7, 2012
(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate
8232621 Semiconductor device July 31, 2012
When letters are written with a ballpoint pen, pen pressure is greater than or equal to 10 MPa. The IC tag embedded in the paper base material is required to withstand such pen pressure. An integrated circuit including a functional circuit which transmits and receive, performs arithm
8232598 Display device and method for manufacturing the same July 31, 2012
To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, a
8232181 Manufacturing method of semiconductor device July 31, 2012
A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source
8228477 Liquid crystal display device and method of manufacturing the same July 24, 2012
In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and
8228454 Peeling method and method for manufacturing display device using the peeling method July 24, 2012
The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby t
8227863 Nonvolatile semiconductor memory device July 24, 2012
A semiconductor layer having a channel formation region provided between a pair of impurity regions spaced from each other is provided, and a first insulating layer a floating gate, a second insulating layer, and a control gate are provided above the semiconductor layer. The semicond
8227802 Semiconductor device July 24, 2012
It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor d
8223531 Semiconductor device and driving method of the same July 17, 2012
The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direc
8223289 Electro-optical device and method for manufacturing the same July 17, 2012
Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single
8222696 Semiconductor device having buried oxide film July 17, 2012
An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and
8222117 SOI substrate and method for manufacturing SOI substrate July 17, 2012
An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a single crystal silicon substrate to form a single crystal silicon substrate which is n (n i
8222092 Semiconductor device and manufacturing method thereof July 17, 2012
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are
8218105 Liquid crystal display device and manufacturing method of liquid crystal display device July 10, 2012
To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal displ
8218099 Liquid crystal display device and method for manufacturing the same July 10, 2012
An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin fi
1 2 3 4 5 6 7 8 9 10










 
 
  Recently Added Patents
Attribute information providing system
Programming method of non-volatile memory device
Advertising system and method
Approaching object detection system
Liposomal nanoparticles and other formulations of fenretinide for use in therapy and drug delivery
Automated synchronization of design features in disparate code components using type differencing
Avoiding conflict in update in distributed environment employing multiple clients
  Randomly Featured Patents
Transport box for use with bicycles
Solid chloride absorbent
Method for the production of an electronically controlled butterfly valve with an inductive sensor of "contact-free" type for an internal combustion engine
Flagellin related polypeptides and uses thereof
Electronic circuit device
Data transfer apparatus and its control method
Transfer press
Aqueous intraocular penetration-promoting eye drop
Transfer and replication arrangement for magnetic bubble memory devices
Thermal processing method and apparatus for use with packaging containers