| Patent Number |
Title Of Patent |
Date Issued |
| RE39393 |
Device for reading an image having a common semiconductor layer |
November 14, 2006 |
| A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate wherein said photoe |
| 7619253 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
November 17, 2009 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7616273 |
Contact structure |
November 10, 2009 |
| There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among |
| 7615825 |
Semiconductor device having tapered gate insulating film |
November 10, 2009 |
| TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production |
| 7615384 |
Semiconductor display device and method of manufacturing the same |
November 10, 2009 |
| A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and |
| 7608492 |
Method for manufacturing semiconductor device and heat treatment method |
October 27, 2009 |
| It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliabili |
| 7608490 |
Semiconductor device and manufacturing method thereof |
October 27, 2009 |
| To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combin |
| 7605029 |
Method of manufacturing semiconductor device |
October 20, 2009 |
| According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H.sub.2, O, O.sub.2, and P are added, are formed in a semiconductor film having a crystal |
| 7601601 |
Method for manufacturing semiconductor device |
October 13, 2009 |
| An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has |
| 7592193 |
Light emitting device |
September 22, 2009 |
| In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and |
| 7585761 |
Manufacturing method of semiconductor device |
September 8, 2009 |
| It is an object of the present invention to suppress an influence of voltage drop due to wiring resistance to make an image quality of a display device uniform. In addition, it is also an object of the present invention to suppress delay due to a wiring for electrically connecting a |
| 7582162 |
Semiconductor device and semiconductor device production system |
September 1, 2009 |
| A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and |
| 7579214 |
Semiconductor device and a method of manufacturing the same |
August 25, 2009 |
| To form a driver circuit to be mounted to a liquid crystal display device or the like on a glass substrate, a quartz substrate, etc., and to provide a display device mounting driver circuits formed from different TFTs suited for their respective operational characteristics. A stick d |
| 7576360 |
Electro-optical device which comprises thin film transistors and method for manufacturing the sa |
August 18, 2009 |
| An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate havi |
| 7573090 |
Nonvolatile semiconductor memory device and manufacturing method thereof |
August 11, 2009 |
| A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided ove |
| 7573069 |
Semiconductor device and manufacturing method thereof |
August 11, 2009 |
| A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an |
| 7573067 |
Semiconductor display device |
August 11, 2009 |
| It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protec |
| 7572688 |
Method for manufacturing semiconductor device |
August 11, 2009 |
| An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming ga |
| 7566640 |
Method for manufacturing thin film integrated circuit device, noncontact thin film integrated ci |
July 28, 2009 |
| To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a |
| 7566633 |
Semiconductor device and method for manufacturing the same |
July 28, 2009 |
| An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors |
| 7566010 |
Securities, chip mounting product, and manufacturing method thereof |
July 28, 2009 |
| The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickne |
| 7566001 |
IC card |
July 28, 2009 |
| The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated |
| 7564512 |
Electro-optical device and method for manufacturing the same |
July 21, 2009 |
| Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single |
| 7564058 |
Display device, manufacturing method thereof, and television set |
July 21, 2009 |
| A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a |
| 7561242 |
Contact structure |
July 14, 2009 |
| There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among |
| 7554260 |
Display device provided with a conductive film connection between a wiring component and a metal |
June 30, 2009 |
| It is an object of the present invention to prevent a bright pixel defect caused by continuous current flow into a pixel, or to provide a display device in which effects on the surrounding pixels due to concentration of current on a part of the pixel can be suppressed. A display device |
| 7553716 |
Method for manufacturing a semiconductor thin film |
June 30, 2009 |
| A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the |
| 7551471 |
Memory element and semiconductor device |
June 23, 2009 |
| The memory element includes a first conductive layer, a second conductive layer, a layer containing a compound which can exhibit liquid crystallinity which is interposed between the first conductive layer and the second conductive layer, and a layer containing an organic compound whi |
| 7550765 |
Semiconductor device and fabrication method thereof |
June 23, 2009 |
| Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristic |
| 7547612 |
Semiconductor device and manufacturing method thereof |
June 16, 2009 |
| It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an ob |
| 7541734 |
Light emitting device having a layer with a metal oxide and a benzoxazole derivative |
June 2, 2009 |
| It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic ma |
| 7538350 |
Semiconductor thin film device |
May 26, 2009 |
| It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or |
| 7538011 |
Method of manufacturing a semiconductor device |
May 26, 2009 |
| An object is to reduce the number of high temperature (equal to or greater than 600.degree. C.) heat treatment process steps and achieve lower temperature (equal to or less than 600.degree. C.) processes, and to simplify the process steps and increase throughput in a method of manufa |
| 7534670 |
Semiconductor device and manufacturing method of the same |
May 19, 2009 |
| Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catal |
| 7524712 |
Method for manufacturing a semiconductor device and laser irradiation method and laser irradiati |
April 28, 2009 |
| When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and |
| 7518692 |
IC card and booking account system using the IC card |
April 14, 2009 |
| It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film |
| 7511709 |
Display device |
March 31, 2009 |
| When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a |
| 7510920 |
Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize |
March 31, 2009 |
| Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal |
| 7508305 |
Packing material, tag, certificate, paper money, and securities |
March 24, 2009 |
| A packing material, a tag, a certificate, paper money, and securities, each of which can be surely prevented from counterfeiting or deception. A plurality of wireless tags used for an object such as a packing material, a tag, a certificate, paper money, or securities. The location of the |
| 7507995 |
Semiconductor memory cell and semiconductor memory device |
March 24, 2009 |
| An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is cryst |
| 7504660 |
Semiconductor device, method of fabricating same, and, electrooptical device |
March 17, 2009 |
| A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to |
| 7499305 |
Semiconductor device and driving method of the same |
March 3, 2009 |
| The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direc |
| 7498206 |
Order receiving process for manufacturing a semiconductor display device |
March 3, 2009 |
| Irrespective of a specification of the controller, a plurality of TFTs are formed for the controller on a substrate in advance. Then, in accordance with a design of the controller, connection is achieved among sources, drains, and gates, which serve as three terminals in each of the plur |
| 7495382 |
Display device having display surfaces with polarizing plates |
February 24, 2009 |
| As for the dual emission display device, since light is emitted to the opposite directions from a light emitting element, the both electrodes provided opposite to the light emitting element are transparent/translucent. Accordingly, difficulty in black display is created, and thus, th |
| 7486262 |
Electronic device and method of driving the same |
February 3, 2009 |
| In an electro-optical device for performing image display using an n-bit (where n is a natural number, n.gtoreq.2) digital image signal, n.times.m (where m is a natural number) volatile memory circuits, and n.times.k (where k is a natural number) non-volatile memory circuits are containe |
| 7485896 |
Light emitting device |
February 3, 2009 |
| An object of the invention is to provide a technique for improving the characteristics of a TFT and realizing an optimum structure of the TFT for the driving conditions of a pixel section and a driving circuit by a small number of photo masks. Therefore, a light emitting device has a |
| 7485586 |
Laser irradiating apparatus and method of manufacturing semiconductor apparatus |
February 3, 2009 |
| First laser light is irradiated (energy density of 400 to 500 mj/cm.sup.2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the ir |
| 7485553 |
Process for manufacturing a semiconductor device |
February 3, 2009 |
| A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconduc |
| 7477216 |
Display device and electronic apparatus |
January 13, 2009 |
| When a pixel and a signal line driver circuit are made up of semi-amorphous TFTs, an amplitude for driving the pixel has to be made larger, and a high power supply voltage is needed. The high power supply voltage increases power consumption in the case of partial drive. According to |
| 7476908 |
Light emitting device |
January 13, 2009 |
| An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a |
