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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yamauchi; Yukio
Address:
Kanagawa, JP
No. of patents:
24
Patents:












Patent Number Title Of Patent Date Issued
7112462 Self-light-emitting apparatus and semiconductor device used in the apparatus September 26, 2006
The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semi
6853083 Thin film transfer, organic electroluminescence display device and manufacturing method of the s February 8, 2005
An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective element
6507072 Insulated gate field effect semiconductor device and forming method thereof January 14, 2003
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is i
6479334 Thin film transistor and semiconductor device and method for forming the same November 12, 2002
A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800.degree. C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtaine
6452212 Semiconductor device and method for operating the same September 17, 2002
A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said a
6448580 Self-light-emitting apparatus and semiconductor device used in the apparatus September 10, 2002
The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semi
6410960 Hybrid integrated circuit component June 25, 2002
A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the
6259141 Insulated gate field effect semiconductor device and forming method thereof July 10, 2001
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is i
6160272 Self-light-emitting apparatus and semiconductor device used in the apparatus December 12, 2000
A semiconductor device is formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate. The semiconductor device is used to drive one of the self-light-emitting elements. The semiconductor device includes an active
6100860 Image display device August 8, 2000
An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1
6008076 Thin film transistor and semiconductor device and method for forming the same December 28, 1999
A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800.degree. C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtaine
6001712 Insulated gate field effect semiconductor device and forming method thereof December 14, 1999
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is i
5897328 Thin film transistor, organic electroluminescence display device and manufacturing method of the April 27, 1999
An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective element
5877533 Hybrid integrated circuit component March 2, 1999
A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the
5821560 Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescen October 13, 1998
A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a la
5643804 Method of manufacturing a hybrid integrated circuit component having a laminated body July 1, 1997
A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the
5640067 Thin film transistor, organic electroluminescence display device and manufacturing method of the June 17, 1997
An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective element
5623165 Insulated gate field effect semiconductor device and forming method thereof April 22, 1997
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is i
5591988 Solid state imaging device with low trap density January 7, 1997
A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said
5576222 Method of making a semiconductor image sensor device November 19, 1996
An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is
5574293 Solid state imaging device using disilane November 12, 1996
A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said
5442198 Non-single crystal semiconductor device with sub-micron grain size August 15, 1995
A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000
5298455 Method for producing a non-single crystal semiconductor device March 29, 1994
A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000
4823368 Open counter for low energy electron detection with suppressed background noise April 18, 1989
A photoelectron counter in an open detection chamber in which photoelectrons emitted from a solid surface by a photon irradiation energy are counted, is arranged so as to suppress background noise which produces a false count rate due to photoelectrons which are emitted from solid su










 
 
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