| Patent Number |
Title Of Patent |
Date Issued |
| 7601603 |
Method for manufacturing semiconductor device |
October 13, 2009 |
| A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming t |
| 7553731 |
Method of manufacturing semiconductor device |
June 30, 2009 |
| A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type |
| 7517771 |
Method for manufacturing semiconductor device having trench |
April 14, 2009 |
| A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of |
| 7465990 |
Semiconductor device having super junction structure |
December 16, 2008 |
| A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the |
| 7417284 |
Semiconductor device and method of manufacturing the same |
August 26, 2008 |
| A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type |
| 7342422 |
Semiconductor device having super junction structure and method for manufacturing the same |
March 11, 2008 |
| A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a te |
| 7342265 |
Vertical-type semiconductor device having repetitive-pattern layer |
March 11, 2008 |
| A semiconductor device is fabricated to include a withstand-voltage assurance layer designed into a multi-dimensional super junction structure and a group of trench gate electrodes, each of which penetrating a body layer in contact with the multi-dimensional super junction structure |
| 7170119 |
Vertical type semiconductor device |
January 30, 2007 |
| In a vertical type MOSFET device having a super junction structure, in which a N conductive type column region and a P conductive type column region are alternately aligned, regarding to a distance between a terminal end of an active region and a terminal end of a column region, the |
