| |
|
Inventor: Yamamoto; Takatoshi
Address: Kyoto, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7981700 |
Semiconductor oxidation apparatus and method of producing semiconductor element |
July 19, 2011 |
| A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a sp |
| 6139643 |
Effusion cell for Si and molecular beam epitaxy system |
October 31, 2000 |
| A crucible is formed of metal, that is, any one of Mo, Ta and W with a thickness of 3 mm or more, and the crucible is melted to produce melted Si liquid, thereby forming a molecular beam. An inner surface of the crucible can be coated with silicide. Also, resistance-type heaters can be u |
|
|
|
