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Yamamoto; Takatoshi
Kyoto, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7981700 Semiconductor oxidation apparatus and method of producing semiconductor element July 19, 2011
A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a sp
6139643 Effusion cell for Si and molecular beam epitaxy system October 31, 2000
A crucible is formed of metal, that is, any one of Mo, Ta and W with a thickness of 3 mm or more, and the crucible is melted to produce melted Si liquid, thereby forming a molecular beam. An inner surface of the crucible can be coated with silicide. Also, resistance-type heaters can be u

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