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Inventor: Yamamoto; Hideo
Address: Ohi, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5017308 |
Silicon thin film and method of producing the same |
May 21, 1991 |
| A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous |
| 4742012 |
Method of making graded junction containing amorphous semiconductor device |
May 3, 1988 |
| This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma |
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