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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Yamaguchi; Yoshihiro
Address:
Saitama, JP
No. of patents:
21
Patents:












Patent Number Title Of Patent Date Issued
8049270 Semiconductor device November 1, 2011
This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second conductivity type formed on a surface of the epitaxial layer. A diffusion layer of a first conductivity type is selectively formed
7927952 Method of manufacturing semiconductor devices April 19, 2011
A method of manufacturing semiconductor devices comprises forming an semiconductor layer of the first conduction type on a substrate of the first conduction type; forming an anti-oxidizing layer on the surface of the semiconductor layer of the first conduction type, the anti-oxidizing
7679652 Image processing system, image capturing apparatus, image processing apparatus, image processing March 16, 2010
An image processing system includes: an image capturing apparatus for obtaining an image of a subject, having a setting unit, which sets an obtaining condition for the image according to user's operation, and an outputting unit, which outputs the obtaining condition in association wi
7663186 Semiconductor device February 16, 2010
A semiconductor device includes: a substrate, a surface portion thereof serving as a drain layer; a first main electrode connected to the drain layer; an epitaxial layer formed on the drain layer; a base layer formed on the epitaxial layer; a source layer formed in a base layer surface
7566933 Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device July 28, 2009
Disclosed is a trench-gate semiconductor device including: a trench gate structure; a source layer having a first conductivity type, facing a gate electrode via a gate insulating film, and having a top plane; a base layer having a second conductivity type, being adjacent to the source
7564097 Trench-gated MOSFET including schottky diode therein July 21, 2009
Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate
7485921 Trench gate type MOS transistor semiconductor device February 3, 2009
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer, and a base layer of a second conductivity type formed on the surface of the epitaxial laye
7479678 Semiconductor element and method of manufacturing the same January 20, 2009
A semiconductor element is provided, comprising a first semiconductor layer of the first conduction type; and a pillar layer including first semiconductor pillars of the first conduction type and second semiconductor pillars of the second conduction type arranged periodically and alt
7400007 Semiconductor device July 15, 2008
A power MOSFET includes an n-type drift layer and a p-type base layer formed in a layered manner on the n-type drift layer. Trench gates are formed to penetrate the p-type base layer to reach the n-type drift layer. On the p-type base layer, n.sup.+-type source regions and p.sup.+-ty
7304667 Image capturing apparatus that outputs condition data in association with an image December 4, 2007
An image processing system includes: an image capturing apparatus for obtaining an image of a subject, having a setting unit, which sets an obtaining condition for the image according to user's operation, and an outputting unit, which outputs the obtaining condition in association wi
7230297 Trench-gated MOSFET including schottky diode therein June 12, 2007
Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate
7103483 Fluid analyzing apparatus, fluid analyzing method, and fluid analyzing program September 5, 2006
Fluid analyzing apparatus includes: an advection step density analyzing unit; an advection step internal energy analyzing unit; and an advection step pressure analyzing unit. The apparatus further includes: an advection step velocity analyzing unit; a nonadvection step small perturba
7047167 Blade shape designing method, program thereof and information medium having the program recorded May 16, 2006
An initial set of individuals having design parameters of a blade as a gene, is determined at random (S12). Next, an analysis using Navier-Stokes equations is performed. On the basis of the analysis result, ranking (evaluation) of respective individuals are performed using a pressure
6977414 Semiconductor device December 20, 2005
A semiconductor device comprises: a semiconductor layer of a first conductivity type; a pair of base regions of a second conductivity type selectively provided on a surface of the semiconductor layer; and source regions of a first conductivity type, each of the source regions being s
6917060 Lateral semiconductor device and vertical semiconductor device July 12, 2005
A vertical semiconductor device including a first conductivity type base layer having resistance higher then of a first conductivity type buffer layer, the first conductivity type buffer layer formed in one surface portion of the first conductivity type base layer, a second conductivity
6879005 High withstand voltage semiconductor device April 12, 2005
A high withstand voltage semiconductor device, comprises: a substrate, a semiconductor layer formed on an upper surface of the substrate, a lateral semiconductor device formed in a surface region of the semiconductor layer and having a first principal electrode in its inner location and
6838730 Semiconductor device January 4, 2005
A semiconductor device comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed in an upper surface of the first semiconductor layer, resistance of the second semiconductor layer being higher than that of the
6677622 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structur January 13, 2004
A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconduc
6650001 Lateral semiconductor device and vertical semiconductor device November 18, 2003
A lateral semiconductor device includes an n-type buffer layer (15) selectively formed in the surface of an n-type base layer (14), a p-type drain layer (16) selectively formed in the surface of the n-type buffer layer (15), a p-type base layer (17) formed in the surface of the n-type
6583555 Flat fluorescent lamp and optical fixing device June 24, 2003
A flat fluorescent lamp has a vessel or housing including first and second substrates opposed to each other at a small distance, and having discharge gas enclosed therein. A first planar electrode layer being transparent is disposed on an inner surface of the first substrate. A second pl
5093701 Conductivity modulated MOSFET March 3, 1992
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor










 
 
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