| Patent Number |
Title Of Patent |
Date Issued |
| 6372040 |
Single crystal growth apparatus and single crystal growth method |
April 16, 2002 |
| In an arrangement to grip lower part of a portion with larger diameter of single crystal formed by CZ method, the present invention provides an apparatus and a method for growing and pulling up the single crystal without causing deformation or rupture and under dislocation-free and s |
| 6117234 |
Single crystal growing apparatus and single crystal growing method |
September 12, 2000 |
| The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si mel |
| 6113686 |
Single crystal growing method and apparatus |
September 5, 2000 |
| A method and apparatus for growing and manufacturing a single crystal according to a so-called Czochralski (CZ) method. A seed crystal 12 is connected to a tip end of a wire 41a as a hanging member 41 to pull and form a single crystal part 15, arm-shaped members 44a of a lifting jig 44 |
| 5871583 |
Apparatus for producing silicon single crystal |
February 16, 1999 |
| An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to |
| 5843229 |
Crystal holding apparatus |
December 1, 1998 |
| In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the |
| 5792258 |
High-frequency induction heater and method of producing semiconductor single crystal using the s |
August 11, 1998 |
| A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided f |
| 5788718 |
Apparatus and a method for growing a single crystal |
August 4, 1998 |
| An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pul |
| 5728211 |
Silicon single crystal with low defect density and method of producing same |
March 17, 1998 |
| A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of |
| 5688321 |
Apparatus for producing a silicon single crystal by a float-zone method |
November 18, 1997 |
| A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 10 |
| 5556461 |
Method for producing a silicon single crystal by a float-zone method |
September 17, 1996 |
| A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 10 |
| 5373805 |
Single crystal pulling apparatus |
December 20, 1994 |
| A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shiel |
| 5361721 |
Single crystal pulling apparatus |
November 8, 1994 |
| A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrysta |
| 5359959 |
Method for pulling up semi-conductor single crystal |
November 1, 1994 |
| A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the |
| 5340434 |
Process for producing silicon single crystal |
August 23, 1994 |
| A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hy |
| 5306387 |
Method for pulling up semiconductor single crystal |
April 26, 1994 |
| A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the |
| 5258092 |
Method of growing silicon monocrystalline rod |
November 2, 1993 |
| The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming |
| 5248378 |
Method and apparatus for producing silicon single crystal |
September 28, 1993 |
| A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is space |
| 5126113 |
Apparatus for producing czochralski-grown single crystals |
June 30, 1992 |
| An apparatus for producing a single crystal ingot grown by the Czochralski method includes a plurality of grip arms each having a grip finger engageable with a downwardly facing engagement step formed on an upper part of the single crystal, and a ring slidably fitted around a plurality |
| 5110404 |
Method for heat processing of silicon |
May 5, 1992 |
| In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a |
| 5067989 |
Single crystal silicon |
November 26, 1991 |
| Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and the total content of the impurities is less than 0.4 ppta. Oxygen-induced stacking faults |
