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Inventor:
Yamada; Tetsuo
Address:
Miyagi, JP
No. of patents:
17
Patents:




Patent Number Title Of Patent Date Issued
7612812 Solid state imaging device with increased vertical resolution in interlace scanning method November 3, 2009
A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, an electric charge read-out dev
7465910 Solid state imaging device with increased vertical and horizontal resolutions in interlace scann December 16, 2008
A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, color filters in a plurality of
7271836 Solid state image pickup device capable of draining unnecessary charge and driving method thereo September 18, 2007
A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal
7230224 Solid state image pickup device with two photosensitive fields per one pixel June 12, 2007
A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area
7227575 Linear image sensor chip and linear image sensor June 5, 2007
A linear image sensor chip is manufactured by forming an image pickup section, peripheral circuit sections, a plurality of bonding pads, and a light-suppressing layer on a semiconductor substrate having an elongated shape. In this case, each of the bonding pads is formed outer than p
7187411 Charge transfer device having discharge drain, CCD image sensor, and CCD image pickup system March 6, 2007
In a CCD image sensor, a CCD line memory is disposed between each vertical charge transfer device and a horizontal charge transfer device to selectively transfer charges from each vertical charge transfer device to the horizontal charge transfer device. A discharge drain is disposed
7184083 Solid state image pickup apparatus of low power consumption and its driving method February 27, 2007
A charge transfer device whose output end is electrically connected to a charge detector circuit is driven by negative pulse voltage trains to reduce power consumption of the charge detector circuit.
7110031 State image pickup apparatus having pixel shift layout September 19, 2006
A color shooting solid state image pickup apparatus is composed by using a solid state image pickup device having a number of color pixels disposed in a plurality of rows and columns in a pixel shift layout with distributing at least one color-type color pixels in a square lattice pa
7091464 Image sensor August 15, 2006
A linear image sensor is constituted to include a red diode line 11, a green diode line 12 and a blue diode line 13, and the green diode line 12 positioned between the red diode line 11 and the blue diode line 13 is provided with a shift of an approximately 1/2 pitch in the vertical
7050101 Solid state image pickup device capable of draining unnecessary charge and driving method thereo May 23, 2006
A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal
7019274 Solid state image pickup device with wide dynamic range March 28, 2006
A solid state image pickup device, having: a semiconductor substrate; a plurality of pixels formed on the semiconductor substrate, each pixel having a plurality of photoelectric conversion elements inclusive of a first photoelectric conversion element and a second photoelectric conve
6914633 Charge transfer path having lengthwisely varying channel width and image pickup device using it July 5, 2005
A solid state image pickup device of high integration, high photoelectric conversion and high transfer performances is made of: a plurality of photoelectric conversion elements disposed in a matrix shape on the surface of a semiconductor substrate, the photoelectric conversion elemen
6891243 Solid-state image pick-up device May 10, 2005
In a solid-state image pick-up device comprising a plurality of light receiving sensor sections, a vertical transfer path 12 formed close to each of the light receiving sensor sections, and a channel stopper 13 provided between the adjacent vertical transfer paths 12 and formed by an
6707498 Charge transfer of solid-state image pickup device March 16, 2004
An image signal processing apparatus includes: a solid-state image pickup device capable of taking a two-dimensional image, the device having a plurality of primary transfer paths and a secondary transfer path, wherein the plurality of primary first transfer each have a plurality of tran
6690421 Structure of solid state image pickup device February 10, 2004
A solid state image pickup device in which a plurality of photoelectric conversion element pairs are disposed in a row direction and a column direction, each pair constituting one unit including two adjacent photoelectric conversion elements disposed in the column direction, wherein
6573935 Two-dimensional solid state image pickup device June 3, 2003
A solid state image pickup device has: a plurality of photoelectric conversion elements for generating and accumulating electric charges corresponding to an amount of incidence light; color filters of a plurality of colors disposed on the plurality of photoelectric conversion element
6236434 Solid state image pickup device May 22, 2001
Photosensor rows are disposed in such a manner that one photosensor row is shifted by a half of a layout pitch of photosensors, relative to another adjacent photosensor row. Column direction charge transfer devices are disposed in such a manner that two column direction charge transfer


 
 
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