| Patent Number |
Title Of Patent |
Date Issued |
| 7420379 |
Semiconductor device test method and semiconductor device tester |
September 2, 2008 |
| A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current |
| 7385195 |
Semiconductor device tester |
June 10, 2008 |
| A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer o |
| 7321805 |
Production managing system of semiconductor device |
January 22, 2008 |
| A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the |
| 7232994 |
Contact hole standard test device, method of forming the same, method of testing contact hole, m |
June 19, 2007 |
| The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the |
| 7049834 |
Semiconductor device test method and semiconductor device tester |
May 23, 2006 |
| A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current |
| 6982418 |
Contact hole standard test device, method of forming the same, method of testing contact hole, m |
January 3, 2006 |
| The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the |
| 6975125 |
Semiconductor device tester |
December 13, 2005 |
| In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acc |
| 6967327 |
Contact hole standard test device, method of forming the same, method testing contact hole, meth |
November 22, 2005 |
| The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the |
| 6946857 |
Semiconductor device tester |
September 20, 2005 |
| In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more con |
| 6943043 |
Surface contamination analyzer for semiconductor wafers, method used therein and process for fab |
September 13, 2005 |
| A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates |
| 6940296 |
Contact hole standard test device, method of forming the same, method of testing contact hole, m |
September 6, 2005 |
| The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the |
| 6914444 |
Semiconductor device test method and semiconductor device tester |
July 5, 2005 |
| A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current |
| 6900645 |
Semiconductor device test method and semiconductor device tester |
May 31, 2005 |
| A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current |
| 6897440 |
Contact hole standard test device |
May 24, 2005 |
| A standard test device used for testing a hole of a semiconductor device includes a dummy film on a base surface, and an insulating layer which has an opening penetrating through the insulating layer, so that a part of a top surface of the dummy film is shown through the opening, wherein |
| 6842663 |
Production managing system of semiconductor device |
January 11, 2005 |
| A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the |
| 6837936 |
Semiconductor manufacturing device |
January 4, 2005 |
| The semiconductor manufacturing device according to the present invention having a mechanical drive part which is moved in a vacuum device while holding a substrate includes at least one discharge port for introducing an inert gas into the vacuum device, and a flow rate control part for |
| 6809534 |
Semiconductor device test method and semiconductor device tester |
October 26, 2004 |
| A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current |
| 6768324 |
Semiconductor device tester which measures information related to a structure of a sample in a d |
July 27, 2004 |
| Current produced in a sample 5 by irradiating the sample with parallel electron beam 2 is measured by an ammeter 9. The measurement is repeated while changing acceleration voltage of electron beam 2. An information related to a structure of the sample 5 in a depth direction thereof is |
| 6753194 |
Surface contamination analyzer for semiconductor wafers, method used therein and process for fab |
June 22, 2004 |
| A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates |
| 6711453 |
Production managing system of semiconductor device |
March 23, 2004 |
| A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the |
| 6614244 |
Semiconductor device inspecting apparatus |
September 2, 2003 |
| A semiconductor device inspecting apparatus capable of a high-precision nondestructive inspection with a reduction of external noises, by using a value of an area having no hole as a background value for a correction when measuring an average current, measuring the current in a current |
| 6614050 |
Semiconductor manufacturing apparatus |
September 2, 2003 |
| A semiconductor manufacturing apparatus, which performs predetermined processing for a group of wafers supplied by a preprocessor that performs preliminary processing, comprises a data storage unit for storing wafer processing history data received from the pre-processor, a target value |
| 6559662 |
Semiconductor device tester and semiconductor device test method |
May 6, 2003 |
| A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or |
| 6545650 |
Apparatus for three-dimensionally displaying object and method of doing the same |
April 8, 2003 |
| There is provided an apparatus for three-dimensionally displaying an object, including (a) image-displaying devices which display images at an observer's eyes, (b) a beam scanner, (c) an area-identifier which detects a direction on which an observer turns at least one eye to thereby |
| 6147822 |
Image display device applying light beam scanning capable of direct image formation on retinas o |
November 14, 2000 |
| An image display device of the present invention comprises a light converting means which converts picture signals into light beams, and a light beam scanning means which scans by beams. The light beam scanning means is provided with an x-axis optical scanner and a y-axis optical sca |
| 5989974 |
Method of manufacturing a semiconductor device |
November 23, 1999 |
| A method of manufacturing a semiconductor device having a region which is partially thinner than the rest thereof is disclosed. A semiconductor thin layer is formed on an insulating layer by an annealing treatment after implanting ions into the semiconductor substrate at a predetermined |
| 5959760 |
Light beam scanner using large electrostatic force |
September 28, 1999 |
| A light beam scanner includes a supporting substrate. Fixed electrodes of a first set are provided on the supporting substrate to oppose to each other. A mirror is provided between the fixed electrodes, has torsion bars physically connected to the supporting substrate and a mirror electr |
| 5914704 |
Locator device using capacitance |
June 22, 1999 |
| A position input device that makes it possible to control the position of a cursor by directly utilizing the movement of a finger of a person with good operability and convenience. This device includes an electrode support formed to define a space into which a position indicator is i |
| 5913076 |
Simple data input device for supplying computer unit digital signal converted from analog signal |
June 15, 1999 |
| A house is two-dimensionally moved, and generates first and second analog signals representative of a movement in opposing first and second directions and another movement in opposing third and fourth directions that are perpendicular to the first and second directions. A data input |
| 5874941 |
Presentation supporting device |
February 23, 1999 |
| A presentation supporting device having excellent operability and adaptability to oral presentations in a computer multimedia environment. First and second accelerometers detect first and second acceleration of gravity resulting from inclinations in first and second sensitivity axis |
| 5656846 |
Semiconductor acceleration sensor and method of fabrication thereof |
August 12, 1997 |
| An acceleration sensor is provided with damping means on an upper surface and/or an lower surface of a movable portion of a sensor body and/or opposite regions surrounded by the movable portion and a rim of the sensor body in order to provide damping of a vibration to the movable portion |
| 5650688 |
Field emission cold cathode element having exposed substrate |
July 22, 1997 |
| A field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes each of which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer, and a gate electrode |
| 5648698 |
Field emission cold cathode element having exposed substrate |
July 15, 1997 |
| A field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer, and a gate electrode which is |
| 5635789 |
Cold cathode |
June 3, 1997 |
| Disclosed is a field emission device which has an emitter formed in the center portion where ion bombardment is likely to occur, and a gate formed partially thicker, or which has a metal layer with the same potential as the emitter and a high melting point, formed in the center portion o |
| 5559390 |
Field emission cold cathode element with locally thickened gate electrode layer |
September 24, 1996 |
| The subject is a field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer and a gate elec |
| 5514847 |
Electron beam radiator with cold cathode integral with focusing grid member and process of fabri |
May 7, 1996 |
| A first laminated sub-structure having a semiconductor substrate, a lower insulating layer on the semiconductor substrate, emitter electrodes formed in micro-apertures in the lower insulating layer and a gate electrode on the upper surface of the lower insulating layer is aligned with a |
| 5496199 |
Electron beam radiator with cold cathode integral with focusing grid member and process of fabri |
March 5, 1996 |
| A first laminated sub-structure having a semiconductor substrate, a lower insulating layer on the semiconductor substrate, emitter electrodes formed in micro-apertures in the lower insulating layer and a gate electrode on the upper surface of the lower insulating layer is aligned with a |
| 5468972 |
Vacuum device for controlling spatial position and path of electron |
November 21, 1995 |
| A vacuum chamber is provided with an electron emission source on a first side wall, a collector on a second side wall opposite to the first side, and an insulated electrode on a bottom wall. Electrons emitted from the electron emission source move over the insulated electrode to be colle |
| 5431050 |
Semiconductor sensor with nested weight portions for converting physical quantity into twisting |
July 11, 1995 |
| An semiconductor acceleration sensor has an inner weight member supported by a supporting member through a pair of first torsion bars for converting a component force into displacement thereof and an outer weight member supported by the inner weight member through a pair of second torsio |
| 5404025 |
Semiconductor vacuum device with planar structure |
April 4, 1995 |
| A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a first and a second tapered edge opposite to one |
| 5396439 |
Acceleration sensing device having negative feedback loop |
March 7, 1995 |
| An output signal of an acceleration sensor is supplied to a DC amplifier to thereby generate an acceleration output. A low frequency component of the acceleration output of the DC amplifier is negatively fed back by a feedback circuit to the input of the DC amplifier. |
| 5081867 |
Semiconductor sensor |
January 21, 1992 |
| A semiconductor sensor comprising a semiconductor sensor member provided on a support member. The sensor member has a base portion and a rim portion connected to each other by a beam portion. The base portion is fixed to the support member and the rim portion is held by the beam portion |
