| Patent Number |
Title Of Patent |
Date Issued |
| 5330941 |
Quartz glass substrate for polysilicon thin film transistor liquid crystal display |
July 19, 1994 |
| A quartz glass substrate for polysilicon thin film transistor liquid crystal display, in which a halogen content is not more than 10 ppm; an OH content is not more than 100 ppm; a total content of a heavy metal element and an alkali metal element is not more than 1 ppm; and an annealing |
| 5326729 |
Transparent quartz glass and process for its production |
July 5, 1994 |
| Quartz glass obtained by flame-hydrolyzing a glass-forming raw material to obtain fine particles of quartz glass, having the fine particles of quartz glass deposited and grown on a substrate to obtain a porous quartz glass product and heating the porous quartz glass product to obtain a |
| 5149351 |
Method for making a curved solar panel for an automobile |
September 22, 1992 |
| A method of making a curved glass surface with a solar panel formed thereon. A window for an automobile, especially for a sunroof is formed by heating a glass sheet from 500.degree. to 600.degree. C. A transparent electroconductive film is then formed on one side, such as by a CVD method |
| 5059254 |
Solar cell substrate and solar panel for automobile |
October 22, 1991 |
| A glass substrate for a solar cell, comprising a glass sheet having a curved surface shape and a transparent electroconductive film formed on the concave surface side of said glass sheet. |
| 4880163 |
Gas feeding nozzle for a chemical vapor deposition apparatus |
November 14, 1989 |
| A gas feeding nozzle feeds at least one kind of gas to form a thin film on a substrate by a normal pressure vapor deposition process. The nozzle is constituted by a plurality of plate-like bodies. A single or a plurality of slit-like gas discharging apertures are formed by stacking space |
| 4808462 |
Solar cell substrate |
February 28, 1989 |
| A solar cell substrate comprising a glass substrate and a transparent electrically conductive layer formed thereon, said conductive layer having a plurality of polygonal projections, having approximate diameters of from 0.1 to 0.3 .mu.m and height/diameter ratios of at least 0.6 |
