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Inventor: Xin; Chunyun
Address: Shanghai, CN
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7700399 |
Method of making CMOS image sensor--hybrid silicide |
April 20, 2010 |
| Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se |
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