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Inventor:
Xin; Chunyun
Address:
Shanghai, CN
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
7700399 Method of making CMOS image sensor--hybrid silicide April 20, 2010
Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a se










 
 
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