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Inventor: Xapsos; Michael
Address: Alexandria, VA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6777753 |
CMOS devices hardened against total dose radiation effects |
August 17, 2004 |
| A CMOS or NMOS device has one or more n-channel FETs disposed on a substrate, the device being resistant to total dose radiation failures, the device further including a negative voltage source, for applying a steady negative back bias to the substrate of the n-channel FETs to mitiga |
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