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Inventor: Xang; Qi
Address: San Jose, CA
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6559051 |
Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors |
May 6, 2003 |
| High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolessly plating a metal |
| 6300203 |
Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistor |
October 9, 2001 |
| High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolytically plating a |
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