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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Wu; Yifeng
Address:
Goleta, CA
No. of patents:
46
Patents:












Patent Number Title Of Patent Date Issued
8575651 Devices having thick semi-insulating epitaxial gallium nitride layer November 5, 2013
Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial
8569970 LED with integrated constant current driver October 29, 2013
An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circu
8289065 Inductive load power switching circuits October 16, 2012
Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the t
8283699 GaN based HEMTs with buried field plates October 9, 2012
A transistor comprising an active region, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A first spacer layer is on at least part of the surface of the active r
8274159 Group III nitride based flip-chip integrated circuit and method for fabricating September 25, 2012
A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circu
8237198 Semiconductor heterostructure diodes August 7, 2012
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact i
8232739 LED with integrated constant current driver July 31, 2012
An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circu
8212290 High temperature performance capable gallium nitride transistor July 3, 2012
A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semic
8212289 Group III nitride field effect transistors (FETS) capable of withstanding high temperature rever July 3, 2012
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (V.sub.DS) of about from about 28 to about 70 volts, a gate to source voltage (V.sub.gs) of from about -3.3 to about -14
8198178 Methods of fabricating normally-off semiconductor devices June 12, 2012
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride
8169005 High voltage GaN transistors May 1, 2012
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
8138529 Package configurations for low EMI circuits March 20, 2012
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is
8120064 Wide bandgap transistor devices with field plates February 21, 2012
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer lay
8111001 LED with integrated constant current driver February 7, 2012
An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circu
7985986 Normally-off semiconductor devices July 26, 2011
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride
7965126 Bridge circuits and their components June 21, 2011
A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and
7955918 Robust transistors with fluorine treatment June 7, 2011
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semicond
7943954 LED fabrication via ion implant isolation May 17, 2011
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium
7928475 Wide bandgap transistor devices with field plates April 19, 2011
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer lay
7915644 Wide bandgap HEMTs with source connected field plates March 29, 2011
A HEMT comprising an active region comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the active region. A spacer layer is formed on at least a portion of a surface of said act
7898004 Semiconductor heterostructure diodes March 1, 2011
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact i
7893500 High voltage GaN transistors February 22, 2011
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
7884394 III-nitride devices and circuits February 8, 2011
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and c
7875907 III-nitride bidirectional switches January 25, 2011
Bidirectional switches are described. The bidirectional switches include first and a second III-N based high electron mobility transistor. In some embodiments, the source of the first transistor is in electrical contact with a source of the second transistor. In some embodiments, the dra
7851909 Group III nitride based flip-chip integrated circuit and method for fabricating December 14, 2010
A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circu
7812369 Fabrication of single or multiple gate field plates October 12, 2010
A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field
7791285 High efficiency AC LED driver circuit September 7, 2010
In an AC drive circuit for LEDs, a current limiting capacitor connects to an AC source, a first circuit portion, including a first rectifying diode and a first power capacitor, connects between the current limiting capacitor and the source and a second circuit portion, including a second
7692263 High voltage GaN transistors April 6, 2010
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
7638818 Robust transistors with fluorine treatment December 29, 2009
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semicond
7612390 Heterojunction transistors including energy barriers November 3, 2009
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer
7592634 LED fabrication via ion implant isolation September 22, 2009
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium
7573078 Wide bandgap transistors with multiple field plates August 11, 2009
A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and drain electrodes and on the plurality of semiconductor layers. A plurality of field pl
7566918 Nitride based transistors for millimeter wave operation July 28, 2009
Field effect transistors having a power density of greater than 5 W/mm when operated at a frequency of at least 30 GHz are provided. The power density of at least 5 W/mm may be provided at a drain voltage of 28 V. Transistors with a power density of at least 8 W/mm when operated at 40
7550783 Wide bandgap HEMTs with source connected field plates June 23, 2009
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active
7501669 Wide bandgap transistor devices with field plates March 10, 2009
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer i
7465967 Group III nitride field effect transistors (FETS) capable of withstanding high temperature rever December 16, 2008
Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (V.sub.DS) of about 56 volts, a gate to source voltage (V.sub.gs) of from about -8 to about -14 volts and a temperature
7388236 High efficiency and/or high power density wide bandgap transistors June 17, 2008
Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5
7355215 Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies April 8, 2008
High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the
7354782 Group III nitride based flip-chip integrated circuit and method for fabricating April 8, 2008
A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on a wafer and separating the active semiconductor devices. Passive components and interco
7338822 LED fabrication via ion implant isolation March 4, 2008
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium
7230284 Insulating gate AlGaN/GaN HEMT June 12, 2007
AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semi
7161194 High power density and/or linearity transistors January 9, 2007
Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Tr
7126426 Cascode amplifier structures including wide bandgap field effect transistor with field plates October 24, 2006
A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-plate transistor and
6849882 Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer February 1, 2005
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-
6825559 Group III nitride based flip-chip intergrated circuit and method for fabricating November 30, 2004
A flip-chip integrated circuit includes a circuit substrate having electronic components. The circuit substrate typically includes GaAs or Si. Another substrate can include Group III nitride based active semiconductor devices. This substrate typically includes SiC and can be separate
6586781 Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same July 1, 2003
New Group III nitride based field effect transistors and high electron mobility transistors are disclosed that provide enhanced high frequency response characteristics. The preferred transistors are made from GaN/AlGaN and have a dielectric layer on the surface of their conductive ch










 
 
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