A small-size (w<0.5 micrometers) alignment mark in combination with a "k1 process" is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT and GC-DT overlay alignment. The "k1 process" is utilized to etch
A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a se
A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiO.sub.x N.sub.y, some acids are produced o
