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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Wilson; Robin
Address:
Belfast, GB
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8169057 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode May 1, 2012
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed i
8058091 Front lit PIN/NIP diode having a continuous anode/cathode November 15, 2011
A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first mai
8030133 Method of fabricating a bonded wafer substrate for use in MEMS structures October 4, 2011
A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate
7999348 Technique for stable processing of thin/fragile substrates August 16, 2011
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main sur
7972934 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio July 5, 2011
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7910479 Method of manufacturing a photodiode array with through-wafer vias March 22, 2011
A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a seco
7821089 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio October 26, 2010
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7741141 Photodiode having increased proportion of light-sensitive area to light-insensitive area June 22, 2010
A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer
7709950 Silicon wafer having through-wafer vias May 4, 2010
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the
7601556 Front side electrical contact for photodetector array and method of making same October 13, 2009
A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the ph
7579667 Bonded-wafer superjunction semiconductor device August 25, 2009
A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the










 
 
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