Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Wilson; Robin
Address:
Belfast, GB
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8169057 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode May 1, 2012
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed i
8058091 Front lit PIN/NIP diode having a continuous anode/cathode November 15, 2011
A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first mai
8030133 Method of fabricating a bonded wafer substrate for use in MEMS structures October 4, 2011
A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate
7999348 Technique for stable processing of thin/fragile substrates August 16, 2011
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main sur
7972934 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio July 5, 2011
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7910479 Method of manufacturing a photodiode array with through-wafer vias March 22, 2011
A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a seco
7821089 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio October 26, 2010
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7741141 Photodiode having increased proportion of light-sensitive area to light-insensitive area June 22, 2010
A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer
7709950 Silicon wafer having through-wafer vias May 4, 2010
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the
7601556 Front side electrical contact for photodetector array and method of making same October 13, 2009
A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the ph
7579667 Bonded-wafer superjunction semiconductor device August 25, 2009
A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the










 
 
  Recently Added Patents
Process for shaping polymeric articles
Imidazolidine-2,4-dione derivatives, and use thereof as a cancer drug
ZNF217 a new prognostic and predictive biomarker of recurrent invasive and metastatic phenotypes in breast cancer
Apparatus and method for controlling semiconductor die warpage
Printing control method and printer for printing on a label
High porosity ceramic honeycomb article containing rare earth oxide and method of manufacturing same
Dithering method and apparatus
  Randomly Featured Patents
Mooring system with frangible links
System and method for setting functions according to location
Vibration isolation system for chain saw structures
Closed circuit steam cooled bucket
Zoom lens and photographing apparatus having the same
Tablecloth memory matrix with staggered EPROM cells
Nonpowered disc scalping apparatus for sugar beets and like plants
Dynamic nest level determination for nested transactional memory rollback
Anterior cervical facet discectomy surgery kit and method for its use
LED module