Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Wilson; Robin
Address:
Belfast, GB
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8169057 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode May 1, 2012
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed i
8058091 Front lit PIN/NIP diode having a continuous anode/cathode November 15, 2011
A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first mai
8030133 Method of fabricating a bonded wafer substrate for use in MEMS structures October 4, 2011
A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate
7999348 Technique for stable processing of thin/fragile substrates August 16, 2011
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main sur
7972934 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio July 5, 2011
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7910479 Method of manufacturing a photodiode array with through-wafer vias March 22, 2011
A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a seco
7821089 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodio October 26, 2010
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodet
7741141 Photodiode having increased proportion of light-sensitive area to light-insensitive area June 22, 2010
A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer
7709950 Silicon wafer having through-wafer vias May 4, 2010
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the
7601556 Front side electrical contact for photodetector array and method of making same October 13, 2009
A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the ph
7579667 Bonded-wafer superjunction semiconductor device August 25, 2009
A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the










 
 
  Recently Added Patents
Mobile terminal and controlling method thereof
Recombinant negative strand virus RNA expression systems and vaccines
Antibody recognizing turn structure in amyloid .beta.
Systems and methods for velocity profile based approach to point control
Configuration and incentive in event management environment providing an automated segmentation of consideration
Exposure method, exposure apparatus, and method for producing device
Method for producing SOI substrate and SOI substrate
  Randomly Featured Patents
Powershift gearbox and shifting method therefor
System and method for call transferring in a communication system
Child exerciser/rocker
Semiconductor laser element, method for manufacturing the same, and optical pickup using the same
Fast startup supply for chip initialization
Ski brake
Tool post assembly for quick displacement of a tool of a machine tool
Oscillator circuit
Handbrake linkage for transmitting mechanical braking force between adjacent rail vehicles
Fuel injection control device for a variable-fuel engine and engine incorporating same