| Patent Number |
Title Of Patent |
Date Issued |
| T969010 |
Monolithically integrated semiconductor structure containing at least two devices in a common zo |
April 4, 1978 |
| to prevent a parasitic lateral transistor or thyristor effect in an integrated structure including a transistor and a further device sharing one common zone, a doped region which is more highly doped with regard to the common zone and which simultaneously constitutes a contact region is |
| 4035664 |
Current hogging injection logic |
July 12, 1977 |
| The disclosure is directed to the circuitry and monolithic semiconductor structure of Current Hogging Injection Logic Configurations. More specifically the disclosure relates to a semiconductor arrangement for the basic components of a highly integratable, logic semiconductor circuit |
| 4027176 |
Sense circuit for memory storage system |
May 31, 1977 |
| This teaches a sense circuit for an integrated memory storage system in which the storage cell output is detected by a differential amplifier, controlling a flip-flop, serving as a latch, having load elements which also function as the load elements of the latch to ensure an optimum powe |
| 4023148 |
Write speed-up circuit for integrated data memories |
May 10, 1977 |
| Modern bipolar cross coupled memory cells for high density arrays use diodes as coupling elements from the cell to the bit lines. The write operation of these cells requires a high amount of current if the current gain of the cell transistors is high. The time required to perform a write |
| 4007451 |
Method and circuit arrangement for operating a highly integrated monolithic information store |
February 8, 1977 |
| A method and circuit arrangement for operating an information store, in particular a monolithic information store, whose storage cells and address circuits comprise bipolar transistors which are not continuously subjected to full power. The monolithic information store is readily fabrica |
| 3956641 |
Complementary transistor circuit for carrying out boolean functions |
May 11, 1976 |
| Integrated circuit devices for carrying out boolean logic functions of at least two input variables.The integrated circuit device for carrying out the logical function of at least two input variables is characterized as follows: the transistors employed are bipolar transistors of a first |
| 3955210 |
Elimination of SCR structure |
May 4, 1976 |
| A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic |
