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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Weimer; Ron
Address:
Boise, ID
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8058140 Thickened sidewall dielectric for memory cell November 15, 2011
Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active area defined by sidewalls of neighboring trenches. A layer of dielectric material is b
7705389 Thickened sidewall dielectric for memory cell April 27, 2010
Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active area defined by sidewalls of neighboring trenches. A layer of dielectric material is b
6734062 Methods of forming DRAM cells May 11, 2004
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate including a monocrystalline material is bonded to the first substrate. After the
6707090 DRAM cell constructions March 16, 2004
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate containing a monocrystalline material is bonded to the first substrate. After th
6639243 DRAM cell constructions October 28, 2003
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate having a monocrystalline material is bonded to the first substrate. After the
6458714 Method of selective oxidation in semiconductor manufacture October 1, 2002
Disclosed is a method of selective oxidation of components of a semiconductor transistor containing silicon in the presence of high conductivity metal or metal alloys. A high temperature annealing step allows hydrogen gas to permeate the surface of a metal or metal alloy and creates
6429070 DRAM cell constructions, and methods of forming DRAM cells August 6, 2002
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate including a monocrystalline material is bonded to the first substrate. After the










 
 
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