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Watts; David
Austin, TX
No. of patents:

Patent Number Title Of Patent Date Issued
5935871 Process for forming a semiconductor device August 10, 1999
A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In
5897375 Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit ma April 27, 1999
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abras

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