| Patent Number |
Title Of Patent |
Date Issued |
| 4857115 |
Photovoltaic device |
August 15, 1989 |
| The present invention relates to a photovoltaic device using hydrogenated amorphous silicon as a photoactive layer, wherein the ratio of the number of silicon atoms bonded to hydrogen atoms to the total number of silicon atoms (expressed as a percentage) is 1% or less and the density of |
| 4776894 |
Photovoltaic device |
October 11, 1988 |
| A first photovoltaic device according to the present invention comprises a plurality of unit photovoltaic cells layered in optical series, each unit photovoltaic cell including an optically active layer made of amorphous silicon and two impurity doped layers of opposite conductivity type |
| 4755483 |
Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor fi |
July 5, 1988 |
| A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. A |
| 4719123 |
Method for fabricating periodically multilayered film |
January 12, 1988 |
| A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition |
| 4705912 |
Photovoltaic device |
November 10, 1987 |
| A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multil |
