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Wakamiya; Mikio
Mie-ken, JP
No. of patents:

Patent Number Title Of Patent Date Issued
6905980 Semiconductor device and method of manufacturing same June 14, 2005
A semiconductor device is produced by forming a gate oxide film on a silicon substrate, forming a gate electrode on the gate oxide film, forming a nitrogen-containing oxide film on the silicon substrate and gate electrode in an N.sub.2 O gas or an NO gas, forming a BPSG film on the n

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